JPS589954B2 - rhythm hatsei sochi - Google Patents
rhythm hatsei sochiInfo
- Publication number
- JPS589954B2 JPS589954B2 JP50025139A JP2513975A JPS589954B2 JP S589954 B2 JPS589954 B2 JP S589954B2 JP 50025139 A JP50025139 A JP 50025139A JP 2513975 A JP2513975 A JP 2513975A JP S589954 B2 JPS589954 B2 JP S589954B2
- Authority
- JP
- Japan
- Prior art keywords
- output
- clock signal
- input
- counting
- tempo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000033764 rhythmic process Effects 0.000 title claims description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Landscapes
- Electrophonic Musical Instruments (AREA)
Description
【発明の詳細な説明】 本発明はリズム発生装置に関する。[Detailed description of the invention] The present invention relates to a rhythm generating device.
従来電子オルガンには自動伴奏或いはオートリズムと呼
ばれる機能を有するものがあり、このテンポ設定はRC
発振器或いはLC発振器の発振周波数を可変抵抗器のダ
イヤル調整により加減する機構である。Some conventional electronic organs have a function called automatic accompaniment or autorhythm, and this tempo setting is set by RC.
This is a mechanism that adjusts the oscillation frequency of an oscillator or LC oscillator by adjusting the dial of a variable resistor.
従って電子楽器のテンポ設定は、本演奏の前にあらかじ
め実際に自動伴奏(オートリズム)を鳴らせながら短い
フレーズ演奏を行ない、ダイヤル調整でテンポを加減し
、希望する演奏テンポと一致する自動伴奏テンポを設定
しておく。Therefore, to set the tempo of an electronic musical instrument, before the actual performance, play a short phrase while playing the automatic accompaniment (auto rhythm), adjust the tempo by adjusting the dial, and set the automatic accompaniment tempo that matches the desired performance tempo. Set it.
これは本演奏前にフレーズ演奏を行なうもので、演奏者
、騎手共に好しいものでない上に、このようにあらかじ
め設定したテンポは、本演奏と重ねて自動伴奏を行なっ
た場合に、本演奏のテンポと合致しにくい問題がある。This is a phrase performance that is performed before the main performance, which is not good for both the performer and the jockey, and the tempo set in advance like this means that if the automatic accompaniment is played over the main performance, There is a problem that it is difficult to match the tempo.
一般に指揮者のいないバンドの実際の演奏に際しては、
ドラム等のリズムパートが本演奏直前に1小節だけ先行
して所定のテンポでリズムを開始し、次いでバンド全体
が同じテンポで本演奏を開始する方式を採るが、これは
テンポズレが少なく、また騎手にとっても不快感はない
。Generally, when a band performs without a conductor,
The rhythm part such as the drums precedes the main performance by one measure and starts the rhythm at a predetermined tempo, and then the entire band starts the main performance at the same tempo. There is no discomfort at all.
本発明は電子楽器のテンポ設定に関して上記バンド演奏
の思想を取り入れて従来の問題点を解決しようとするも
のであり、例えば電子楽器に手等で触れることにより0
N−OFFするタッチスイッチ或いは同効のスイッチを
設け、これに2回触れることで任意の時間間隔を記憶し
、この時間間隔を所定の比率に逓倍または分周して繰返
し出力する機能を有し、本演奏直前に一小節或いは一拍
分の時間間隔を先行してタッチスイッチに触れることに
よって本演奏と重なった自動伴奏が同テンポで開始でき
るリズム発生器を提供するものである。The present invention attempts to solve the conventional problems with respect to setting the tempo of an electronic musical instrument by incorporating the above-mentioned concept of band performance.
A touch switch that turns N-OFF or a switch with the same effect is provided, and by touching it twice, it has the function of memorizing an arbitrary time interval, multiplying or dividing this time interval to a predetermined ratio, and repeatedly outputting it. To provide a rhythm generator which can start automatic accompaniment overlapping the main performance at the same tempo by touching a touch switch immediately before the main performance at a time interval of one bar or one beat.
以下本発明の一実施例を図面に基づいて説明する。An embodiment of the present invention will be described below based on the drawings.
第1図において、A、Bは第1、第2の計数手段として
のリセット付計数器で、同形式のものから成り、例岑ば
複、数個のフリップフロップにより構成された分周器で
よい。In FIG. 1, A and B are reset counters as first and second counting means, which are of the same type, for example, a frequency divider composed of multiple or several flip-flops. good.
9,10はクロック入力端子1L12はリセット入力ラ
インである。9 and 10 are clock input terminals 1L12 is a reset input line.
第2図は計数器の一例としてフリップフロップ10段に
よるリセット付分周器とその計数状態を示す。FIG. 2 shows, as an example of a counter, a frequency divider with reset using 10 stages of flip-flops and its counting state.
第2図のようなリセット付10段分周器の各段出力01
〜010は、第1表に示すように、リセットされた状態
から順次計数し、210=1024まで計数し得る。Each stage output 01 of a 10-stage frequency divider with reset as shown in Figure 2
~010 is counted sequentially from the reset state as shown in Table 1, and can be counted up to 210=1024.
第1図のCはスイッチ(開閉回路)で、ONされると一
瞬リセット信号を発生し、ライン11を通して計数器A
をリセットしておき、ONされている時間だけ入力端子
9からのクロック信号を計数器Aに入力する機能を有す
る。C in Fig. 1 is a switch (opening/closing circuit), which momentarily generates a reset signal when turned on, and sends a reset signal to the counter A via line 11.
It has a function of resetting the counter A and inputting the clock signal from the input terminal 9 to the counter A only while it is turned on.
所定ON時間を得るための開閉操作が便利なのは、タッ
チスイッチであり、第3図に時間Tを隔てて手等で2度
触れることにより時間TだけON信号を発生するタッチ
スイッチの回路例とその機能を図示した。Touch switches are convenient for opening/closing operations to obtain a predetermined ON time. Figure 3 shows an example circuit of a touch switch that generates an ON signal for a time T by touching it twice with a hand or the like, separated by a time T. Illustrated functions.
第3図イにおいて、Fは導電性のタッチ部で、手等によ
って触れると、ライン21のバイレベル信号がライン2
2に出力され、トランジスタ23.24および付加抵抗
、付加容量を含む波形整形部Gで波形整形されて、フリ
ップフロップHに入力され、タッチスイッチに2度触れ
ることで定義された時間間隔Tだけバイレベルであるよ
うな出力が端子26から得られる。In Fig. 3A, F is a conductive touch part, and when it is touched by hand etc., the bi-level signal of line 21 is changed to line 2.
2, the waveform is shaped by a waveform shaping section G including transistors 23 and 24, an additional resistor, and an additional capacitor, and is input to a flip-flop H, and is biased for a time interval T defined by touching the touch switch twice. An output such as the level is obtained from terminal 26.
25はバイレベル端子、27はローレベル端子である。25 is a bi-level terminal, and 27 is a low-level terminal.
端子26の出力信号でスイッチCを駆動し、指定の時間
間隔だけ計数器Aにクロック信号が入力するよう制御で
きる。The switch C is driven by the output signal of the terminal 26, and the clock signal can be controlled to be input to the counter A only at specified time intervals.
第3図口において、aは一定時間Tの間隔でタッチスイ
ッチFに2度触れたタイミングを示し、bはライン22
の出力を、CとdはフリップフロップHの入力と出力を
それぞれ示している。In Fig. 3, a indicates the timing when the touch switch F is touched twice at an interval of a certain time T, and b indicates the line 22.
C and d indicate the input and output of flip-flop H, respectively.
第1図のDは判別手段としての比較器で計数器A、Bの
出力を比較し、両者が完全に一致した時に出力に<1>
信号を発生し、ライン12を通して計数器Bをリセット
する。D in Figure 1 is a comparator that serves as a discrimination means, and compares the outputs of counters A and B, and when they completely match, the output is <1>.
Generates a signal to reset counter B through line 12.
第4図に比較器の一例である排他的ORゲートを示し、
第2表の真理値表に示すように入力XおよびYが同じ値
であれば〈1〉を出力する。FIG. 4 shows an exclusive OR gate which is an example of a comparator,
As shown in the truth table in Table 2, if inputs X and Y have the same value, <1> is output.
従って第5図に示すように、この排他的ORゲートを複
数個31〜33設け、計数器A、Hの各出力を個々に比
較し、各排他的ORゲートがすべて〈1〉信号である時
だけANDゲート34は〈1〉信号を発生するようにす
れば、比較器の機能を果すことができる。Therefore, as shown in FIG. 5, a plurality of exclusive OR gates 31 to 33 are provided, and the outputs of counters A and H are individually compared, and when all the exclusive OR gates are <1> signals, If only the AND gate 34 generates a <1> signal, it can function as a comparator.
第1図のEは波形合成器であり、比較器りの出力を適当
な時間長、適当な音色に変換して出力端子13に出力す
る。E in FIG. 1 is a waveform synthesizer, which converts the output of the comparator into an appropriate time length and appropriate tone color and outputs it to the output terminal 13.
14は計数器Bの強制外部リセットである。14 is a forced external reset of counter B.
システム全体としては、入力端子9に入力された第1の
クロック信号としてのクロックφAがある短い時間間隔
TだけスイッチCの働きで計数器Aに入力され、計数器
AはOから順に入力クロック数を計数し、入力がなくな
ると計数値を保持し、一方計数器Bは入力端子10に入
力された第2のクロック信号としてのクロックφBによ
り計数を実行し、比較器りが計数器Aの保持計数値と計
数器Bの計数状態を比較し、両者が一致した時にリセッ
ト信号をライン12に流して計数器Bをリセットする。As for the entire system, the clock φA as the first clock signal input to the input terminal 9 is input to the counter A for a certain short time interval T by the action of the switch C, and the counter A sequentially receives the number of input clocks from O. and when there is no input, it holds the count value, while counter B performs counting using the clock φB as the second clock signal input to the input terminal 10, and the comparator holds the count value. The counted value and the counting state of counter B are compared, and when the two match, a reset signal is sent to line 12 to reset counter B.
システムは以上の動作を繰返す。また出力は波形合成器
Eで波形合成され適当な波形として出力端子13に出力
される。The system repeats the above operations. Further, the output is waveform-combined by a waveform synthesizer E and outputted to an output terminal 13 as a suitable waveform.
つまり入力端子9に入力されるクロックφAによって計
数器Aに記憶された時間間隔Tは、入力端子10に入力
されるクロックφBによって計数器Bで時間間隔T′に
変換されて読出される訳である。In other words, the time interval T stored in the counter A by the clock φA input to the input terminal 9 is converted into a time interval T' by the counter B and read out by the clock φB input to the input terminal 10. be.
第1図の1はクロック原信号φ。1 in FIG. 1 is the clock original signal φ.
の入力端子であり、2〜4は分周器群、5〜8はその端
子である。2 to 4 are frequency divider groups, and 5 to 8 are their terminals.
今仮に2を1/2分周器、3を1/3分周器、4を1/
4分周器とする。Now suppose 2 is a 1/2 frequency divider, 3 is a 1/3 frequency divider, and 4 is a 1/2 frequency divider.
It is a 4 frequency divider.
また入力端子9.10のクロック入力は選択接続回路F
により端子5〜8から供給されるものとする。In addition, the clock input of input terminals 9 and 10 is connected to the selective connection circuit F.
It is assumed that the voltage is supplied from terminals 5 to 8.
前記φAおよびφBに分周器群2〜3によるφ。φ by frequency divider groups 2 to 3 to φA and φB.
の分周信号と選択して端子5〜8と9,10との間を適
宜接続すると、クロックφAとクロックφBとの繰返し
周期の比率が相対的に変化し、タッチスイッチ等で定義
して入力された時間間隔Tが様々の比で変換されて時間
間隔T′として出力される。If you select the frequency divided signal and connect terminals 5 to 8 and 9 and 10 as appropriate, the ratio of the repetition period of clock φA and clock φB will change relatively, and you can input it by defining it with a touch switch etc. The resulting time interval T is converted at various ratios and output as a time interval T'.
φA。φBとしての入力信号の選択と、その出力結果を
第3表に示す。φA. Table 3 shows the selection of the input signal as φB and the output results.
つまりφAの方が周波数が高い場合、時間Tの間の計数
値が大きいので、φ8で読出す時1以上の時間がかかる
こととなり、従ってT’=(φA/φB)・Tの関係が
成立する。In other words, if φA has a higher frequency, the count value during time T is larger, so it will take more than 1 time to read out with φ8, so the relationship T' = (φA / φB) · T is established. do.
第6図は動作例の一例を示し、aは時間間隔Tで2度タ
ッチスイッチに触れたタイミングを、bは第1図のスイ
ッチCがONL、たことを、Cは第1図のライン11の
リセット信号を、dは第1図のクロック原信号を、e
−gは第1図の比較器りの出力信号をそれぞれ示す。FIG. 6 shows an example of the operation, where a indicates the timing when the touch switch is touched twice at the time interval T, b indicates that the switch C in FIG. 1 is ONL, and C indicates the line 11 in FIG. 1. , d is the clock original signal in Figure 1, and e is the reset signal of
-g indicates the output signal of the comparator of FIG. 1, respectively.
e −gの破線は第1図の端子14を通して強制リセッ
トを外部から一瞬入力したタイミングを示し、eはT、
fはT/4、gは2Tの時間信号を出力した例である。The broken line e - g indicates the timing when a forced reset is momentarily input from the outside through the terminal 14 in Fig. 1, and e is T,
In this example, f is a time signal of T/4 and g is a time signal of 2T.
次に応用例として電子楽器の自動伴奏等のテンポ設定装
置について述べる。Next, as an application example, a tempo setting device for automatic accompaniment of electronic musical instruments will be described.
電子楽器に本装置を内蔵し、タッチスイッチ部を外面に
露出させておく。This device is built into an electronic musical instrument, and the touch switch section is exposed to the outside.
本演奏の直前にタッチスイッチに手等で2回触れること
により1小節分或いは1拍分の長さを入力すると、本装
置は直ちにその時間間隔を繰返し再生するので、その出
力でもって自動伴奏装置のテンポタイミングを駆動し自
動伴奏を所定のテンポで行なう。Just before the main performance, if you input the length of one measure or one beat by touching the touch switch twice with your hand, this device will immediately play that time interval repeatedly, and the output will be used by the automatic accompaniment device. The automatic accompaniment is performed at a predetermined tempo.
本装置は前述したように、入力のn倍、1 / nの時
間間隔を出力し得るので、必要に応じ、−小節の時間間
隔を入力して、一拍の時間間隔を出力したり、或いは逆
に一拍の時間間隔を入力して一手節の時間間隔を出力で
きる。As mentioned above, this device can output a time interval of n times the input, 1/n, so if necessary, you can input a time interval of -measure and output a time interval of one beat, or Conversely, you can input the time interval of one beat and output the time interval of one hand.
これで演奏前にタッチスイッチに手を触れるだけでテン
ポ決めが完了し、演奏のテンポと同期して自動伴奏が行
なわれる。Now, just by touching the touch switch before playing, you can set the tempo, and automatic accompaniment will be performed in synchronization with the tempo of the performance.
入力時間の長さと精度により、計数器の容量が決まるが
、演奏に用いる実用上の時間は精度0.01sec、最
大長10secで十分である。The capacity of the counter is determined by the length and precision of the input time, but a precision of 0.01 sec and a maximum length of 10 sec is sufficient for practical time used for performance.
従って計数器として10段分周期を用い、クロック原信
号として100Hz程度を採ると、精度10 m5ec
、最大長210×10m5ec= 10.24secと
なり、実用的テする。Therefore, if a period of 10 stages is used as a counter and a clock original signal of about 100Hz is used, the accuracy is 10 m5ec.
, the maximum length is 210×10m5ec=10.24sec, which is practical.
以上本発明によれば、電子楽器の自動伴奏のテンポ設定
を簡略かつ正確にすることができ、しかも本演奏直前で
テンポを設定し、リズムを開始できるので、テンポズレ
も起らず、騎手とって不快感は解消される。As described above, according to the present invention, the tempo setting of the automatic accompaniment of an electronic musical instrument can be made simple and accurate, and since the tempo can be set and the rhythm can be started immediately before the actual performance, no tempo deviation occurs, and it is convenient for the jockey. The discomfort disappears.
更に第1、第2の計数手段のクロック入力にそれぞれ供
給される第1、第2のクロック信号の繰返し周期の比率
を相対的適宜に変化させるよう構成したため、必要に応
じ、−小節の時間間隔を入力して一拍の時間間隔を出力
したり、或いは逆に一拍の時間間隔を入力して一手節の
時間間隔を出力することができ、リズム発生装置の操作
が向上するものである。Furthermore, since the ratio of the repetition periods of the first and second clock signals supplied to the clock inputs of the first and second counting means is relatively appropriately changed, the time interval of -bar can be adjusted as necessary. It is possible to input the time interval of one beat and output the time interval of one beat, or conversely, input the time interval of one beat and output the time interval of one hand, improving the operation of the rhythm generator.
第1図は本発明の一実施例を示すブロック図、第2図は
計数器の一例を示すブロック図、第3図イ20はタッチ
スイッチの一例を示す回路図およびその波形図、第4図
は排他的論理ゲートのブロック図、第5図は比較器の一
例を示すブロック図、第6図は動作例を示す説明図であ
る。
A、B……計数器、C……スイッチ、D……比較器、E
……波形合成器、F……タッチスイッチ、■……分周器
郡。FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a block diagram showing an example of a counter, FIG. 3 is a circuit diagram showing an example of a touch switch and its waveform diagram, and FIG. 5 is a block diagram of an exclusive logic gate, FIG. 5 is a block diagram showing an example of a comparator, and FIG. 6 is an explanatory diagram showing an example of operation. A, B... Counter, C... Switch, D... Comparator, E
... Waveform synthesizer, F ... Touch switch, ■ ... Frequency divider group.
Claims (1)
を通過させるスイッチ手段と、該スイッチ手段から出力
される第1のクロック信号を計数し、前記スイッチ手段
からの第1のクロック信号の供給がオフした時に計数動
作を中止してその時の計数値を保持する第1の計数手段
と、第2のクロック信号を計数する第29計数手段と、
第1の計数手段出力と第2の計数手段出力を比較して第
2の計数手段出力が実質的に第1の計数手段出力に一致
する毎に繰返し出力を発生する判別手段と、第1のクロ
ック信号と第2のクロック信号の繰返し周期の比率を相
対的に変化させる手段とを設け、第1のクロック信号と
第2のクロック信号の繰返し周期の比率を変えることに
より、判別手段から前記テンポ設定間隔を逓倍または分
周した時間間隔ごとに出力が発生するよう構成したこと
を特徴とするリズム発生装置。1 Switch means for passing a first clock signal for a given tempo setting interval, and counting the first clock signal output from the switch means, and turning off the supply of the first clock signal from the switch means. a first counting means that stops the counting operation and holds the count value at that time, and a twenty-ninth counting means that counts the second clock signal;
a determining means that compares the output of the first counting means and the output of the second counting means and repeatedly generates an output each time the output of the second counting means substantially matches the output of the first counting means; means for relatively changing the ratio of the repetition periods of the clock signal and the second clock signal, and by changing the ratio of the repetition periods of the first clock signal and the second clock signal, the tempo is determined by the determining means. A rhythm generating device characterized in that it is configured to generate an output at each time interval obtained by multiplying or dividing a set interval.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50025139A JPS589954B2 (en) | 1975-02-28 | 1975-02-28 | rhythm hatsei sochi |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50025139A JPS589954B2 (en) | 1975-02-28 | 1975-02-28 | rhythm hatsei sochi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51100712A JPS51100712A (en) | 1976-09-06 |
| JPS589954B2 true JPS589954B2 (en) | 1983-02-23 |
Family
ID=12157631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50025139A Expired JPS589954B2 (en) | 1975-02-28 | 1975-02-28 | rhythm hatsei sochi |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589954B2 (en) |
Cited By (176)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11501956B2 (en) | 2012-10-12 | 2022-11-15 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
| US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
| US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
| US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
| US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
| US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| US11694892B2 (en) | 2016-07-28 | 2023-07-04 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
| US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
| US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
| US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
| US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
| US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| US11956977B2 (en) | 2015-12-29 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
| US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
| US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
| US11976361B2 (en) | 2017-06-28 | 2024-05-07 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
| US11987881B2 (en) | 2020-05-22 | 2024-05-21 | Asm Ip Holding B.V. | Apparatus for depositing thin films using hydrogen peroxide |
| US11986868B2 (en) | 2020-02-28 | 2024-05-21 | Asm Ip Holding B.V. | System dedicated for parts cleaning |
| US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| US12000042B2 (en) | 2016-12-15 | 2024-06-04 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| US12020938B2 (en) | 2018-03-27 | 2024-06-25 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US12020934B2 (en) | 2020-07-08 | 2024-06-25 | Asm Ip Holding B.V. | Substrate processing method |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12027365B2 (en) | 2020-11-24 | 2024-07-02 | Asm Ip Holding B.V. | Methods for filling a gap and related systems and devices |
| US12033885B2 (en) | 2020-01-06 | 2024-07-09 | Asm Ip Holding B.V. | Channeled lift pin |
| US12033861B2 (en) | 2017-10-05 | 2024-07-09 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US12043899B2 (en) | 2017-01-10 | 2024-07-23 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US12051567B2 (en) | 2020-10-07 | 2024-07-30 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including gas supply unit |
| US12057314B2 (en) | 2020-05-15 | 2024-08-06 | Asm Ip Holding B.V. | Methods for silicon germanium uniformity control using multiple precursors |
| US12074022B2 (en) | 2020-08-27 | 2024-08-27 | Asm Ip Holding B.V. | Method and system for forming patterned structures using multiple patterning process |
| US12087586B2 (en) | 2020-04-15 | 2024-09-10 | Asm Ip Holding B.V. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
| US12106944B2 (en) | 2020-06-02 | 2024-10-01 | Asm Ip Holding B.V. | Rotating substrate support |
| US12107005B2 (en) | 2020-10-06 | 2024-10-01 | Asm Ip Holding B.V. | Deposition method and an apparatus for depositing a silicon-containing material |
| US12106965B2 (en) | 2017-02-15 | 2024-10-01 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US12112940B2 (en) | 2019-07-19 | 2024-10-08 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US12119228B2 (en) | 2018-01-19 | 2024-10-15 | Asm Ip Holding B.V. | Deposition method |
| US12125700B2 (en) | 2020-01-16 | 2024-10-22 | Asm Ip Holding B.V. | Method of forming high aspect ratio features |
| US12131885B2 (en) | 2020-12-22 | 2024-10-29 | Asm Ip Holding B.V. | Plasma treatment device having matching box |
| US12129545B2 (en) | 2020-12-22 | 2024-10-29 | Asm Ip Holding B.V. | Precursor capsule, a vessel and a method |
| US12148609B2 (en) | 2020-09-16 | 2024-11-19 | Asm Ip Holding B.V. | Silicon oxide deposition method |
| US12154824B2 (en) | 2020-08-14 | 2024-11-26 | Asm Ip Holding B.V. | Substrate processing method |
| US12159788B2 (en) | 2020-12-14 | 2024-12-03 | Asm Ip Holding B.V. | Method of forming structures for threshold voltage control |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| US12173402B2 (en) | 2018-02-15 | 2024-12-24 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US12195855B2 (en) | 2019-06-06 | 2025-01-14 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
| US12195852B2 (en) | 2020-11-23 | 2025-01-14 | Asm Ip Holding B.V. | Substrate processing apparatus with an injector |
| US12209308B2 (en) | 2020-11-12 | 2025-01-28 | Asm Ip Holding B.V. | Reactor and related methods |
| US12211742B2 (en) | 2020-09-10 | 2025-01-28 | Asm Ip Holding B.V. | Methods for depositing gap filling fluid |
| US12217946B2 (en) | 2020-10-15 | 2025-02-04 | Asm Ip Holding B.V. | Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT |
| US12217954B2 (en) | 2020-08-25 | 2025-02-04 | Asm Ip Holding B.V. | Method of cleaning a surface |
| US12218269B2 (en) | 2020-02-13 | 2025-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus including light receiving device and calibration method of light receiving device |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
| US12218000B2 (en) | 2020-09-25 | 2025-02-04 | Asm Ip Holding B.V. | Semiconductor processing method |
| US12221357B2 (en) | 2020-04-24 | 2025-02-11 | Asm Ip Holding B.V. | Methods and apparatus for stabilizing vanadium compounds |
| US12230531B2 (en) | 2018-04-09 | 2025-02-18 | Asm Ip Holding B.V. | Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method |
| US12243742B2 (en) | 2020-04-21 | 2025-03-04 | Asm Ip Holding B.V. | Method for processing a substrate |
| US12243747B2 (en) | 2020-04-24 | 2025-03-04 | Asm Ip Holding B.V. | Methods of forming structures including vanadium boride and vanadium phosphide layers |
| US12240760B2 (en) | 2016-03-18 | 2025-03-04 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US12243757B2 (en) | 2020-05-21 | 2025-03-04 | Asm Ip Holding B.V. | Flange and apparatus for processing substrates |
| US12241158B2 (en) | 2020-07-20 | 2025-03-04 | Asm Ip Holding B.V. | Method for forming structures including transition metal layers |
| US12247286B2 (en) | 2019-08-09 | 2025-03-11 | Asm Ip Holding B.V. | Heater assembly including cooling apparatus and method of using same |
| US12255053B2 (en) | 2020-12-10 | 2025-03-18 | Asm Ip Holding B.V. | Methods and systems for depositing a layer |
| US12252785B2 (en) | 2019-06-10 | 2025-03-18 | Asm Ip Holding B.V. | Method for cleaning quartz epitaxial chambers |
| US12266695B2 (en) | 2019-11-05 | 2025-04-01 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| US12266524B2 (en) | 2020-06-16 | 2025-04-01 | Asm Ip Holding B.V. | Method for depositing boron containing silicon germanium layers |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| US12278129B2 (en) | 2020-03-04 | 2025-04-15 | Asm Ip Holding B.V. | Alignment fixture for a reactor system |
-
1975
- 1975-02-28 JP JP50025139A patent/JPS589954B2/en not_active Expired
Cited By (190)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
| US11501956B2 (en) | 2012-10-12 | 2022-11-15 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
| US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
| US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US11956977B2 (en) | 2015-12-29 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
| US12240760B2 (en) | 2016-03-18 | 2025-03-04 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
| US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
| US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11694892B2 (en) | 2016-07-28 | 2023-07-04 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11970766B2 (en) | 2016-12-15 | 2024-04-30 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US12000042B2 (en) | 2016-12-15 | 2024-06-04 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US12043899B2 (en) | 2017-01-10 | 2024-07-23 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US12106965B2 (en) | 2017-02-15 | 2024-10-01 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US11976361B2 (en) | 2017-06-28 | 2024-05-07 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US12033861B2 (en) | 2017-10-05 | 2024-07-09 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11972944B2 (en) | 2018-01-19 | 2024-04-30 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US12119228B2 (en) | 2018-01-19 | 2024-10-15 | Asm Ip Holding B.V. | Deposition method |
| US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US12173402B2 (en) | 2018-02-15 | 2024-12-24 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US12020938B2 (en) | 2018-03-27 | 2024-06-25 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US12230531B2 (en) | 2018-04-09 | 2025-02-18 | Asm Ip Holding B.V. | Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US12176243B2 (en) | 2019-02-20 | 2024-12-24 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US12195855B2 (en) | 2019-06-06 | 2025-01-14 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
| US12252785B2 (en) | 2019-06-10 | 2025-03-18 | Asm Ip Holding B.V. | Method for cleaning quartz epitaxial chambers |
| US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| US12107000B2 (en) | 2019-07-10 | 2024-10-01 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11996304B2 (en) | 2019-07-16 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing device |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| US12129548B2 (en) | 2019-07-18 | 2024-10-29 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US12112940B2 (en) | 2019-07-19 | 2024-10-08 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| US12247286B2 (en) | 2019-08-09 | 2025-03-11 | Asm Ip Holding B.V. | Heater assembly including cooling apparatus and method of using same |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
| US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US12033849B2 (en) | 2019-08-23 | 2024-07-09 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US12230497B2 (en) | 2019-10-02 | 2025-02-18 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US12266695B2 (en) | 2019-11-05 | 2025-04-01 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US12119220B2 (en) | 2019-12-19 | 2024-10-15 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US12033885B2 (en) | 2020-01-06 | 2024-07-09 | Asm Ip Holding B.V. | Channeled lift pin |
| US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| US12125700B2 (en) | 2020-01-16 | 2024-10-22 | Asm Ip Holding B.V. | Method of forming high aspect ratio features |
| US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
| US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US12218269B2 (en) | 2020-02-13 | 2025-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus including light receiving device and calibration method of light receiving device |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| US11986868B2 (en) | 2020-02-28 | 2024-05-21 | Asm Ip Holding B.V. | System dedicated for parts cleaning |
| US12278129B2 (en) | 2020-03-04 | 2025-04-15 | Asm Ip Holding B.V. | Alignment fixture for a reactor system |
| US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
| US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| US12087586B2 (en) | 2020-04-15 | 2024-09-10 | Asm Ip Holding B.V. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| US12243742B2 (en) | 2020-04-21 | 2025-03-04 | Asm Ip Holding B.V. | Method for processing a substrate |
| US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
| US12130084B2 (en) | 2020-04-24 | 2024-10-29 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
| US12243747B2 (en) | 2020-04-24 | 2025-03-04 | Asm Ip Holding B.V. | Methods of forming structures including vanadium boride and vanadium phosphide layers |
| US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
| US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| US12221357B2 (en) | 2020-04-24 | 2025-02-11 | Asm Ip Holding B.V. | Methods and apparatus for stabilizing vanadium compounds |
| US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
| US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11798830B2 (en) | 2020-05-01 | 2023-10-24 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
| US12057314B2 (en) | 2020-05-15 | 2024-08-06 | Asm Ip Holding B.V. | Methods for silicon germanium uniformity control using multiple precursors |
| US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
| US12243757B2 (en) | 2020-05-21 | 2025-03-04 | Asm Ip Holding B.V. | Flange and apparatus for processing substrates |
| US11987881B2 (en) | 2020-05-22 | 2024-05-21 | Asm Ip Holding B.V. | Apparatus for depositing thin films using hydrogen peroxide |
| US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
| US12106944B2 (en) | 2020-06-02 | 2024-10-01 | Asm Ip Holding B.V. | Rotating substrate support |
| US12266524B2 (en) | 2020-06-16 | 2025-04-01 | Asm Ip Holding B.V. | Method for depositing boron containing silicon germanium layers |
| US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
| US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
| US12020934B2 (en) | 2020-07-08 | 2024-06-25 | Asm Ip Holding B.V. | Substrate processing method |
| US12055863B2 (en) | 2020-07-17 | 2024-08-06 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
| US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
| US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
| US12241158B2 (en) | 2020-07-20 | 2025-03-04 | Asm Ip Holding B.V. | Method for forming structures including transition metal layers |
| US12154824B2 (en) | 2020-08-14 | 2024-11-26 | Asm Ip Holding B.V. | Substrate processing method |
| US12217954B2 (en) | 2020-08-25 | 2025-02-04 | Asm Ip Holding B.V. | Method of cleaning a surface |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| US12074022B2 (en) | 2020-08-27 | 2024-08-27 | Asm Ip Holding B.V. | Method and system for forming patterned structures using multiple patterning process |
| US12211742B2 (en) | 2020-09-10 | 2025-01-28 | Asm Ip Holding B.V. | Methods for depositing gap filling fluid |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| US12148609B2 (en) | 2020-09-16 | 2024-11-19 | Asm Ip Holding B.V. | Silicon oxide deposition method |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| US12218000B2 (en) | 2020-09-25 | 2025-02-04 | Asm Ip Holding B.V. | Semiconductor processing method |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| US12107005B2 (en) | 2020-10-06 | 2024-10-01 | Asm Ip Holding B.V. | Deposition method and an apparatus for depositing a silicon-containing material |
| US12051567B2 (en) | 2020-10-07 | 2024-07-30 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including gas supply unit |
| US12217946B2 (en) | 2020-10-15 | 2025-02-04 | Asm Ip Holding B.V. | Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT |
| US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
| US12209308B2 (en) | 2020-11-12 | 2025-01-28 | Asm Ip Holding B.V. | Reactor and related methods |
| US12195852B2 (en) | 2020-11-23 | 2025-01-14 | Asm Ip Holding B.V. | Substrate processing apparatus with an injector |
| US12027365B2 (en) | 2020-11-24 | 2024-07-02 | Asm Ip Holding B.V. | Methods for filling a gap and related systems and devices |
| US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
| US12255053B2 (en) | 2020-12-10 | 2025-03-18 | Asm Ip Holding B.V. | Methods and systems for depositing a layer |
| US12159788B2 (en) | 2020-12-14 | 2024-12-03 | Asm Ip Holding B.V. | Method of forming structures for threshold voltage control |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
| US12131885B2 (en) | 2020-12-22 | 2024-10-29 | Asm Ip Holding B.V. | Plasma treatment device having matching box |
| US12129545B2 (en) | 2020-12-22 | 2024-10-29 | Asm Ip Holding B.V. | Precursor capsule, a vessel and a method |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51100712A (en) | 1976-09-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS589954B2 (en) | rhythm hatsei sochi | |
| US4207791A (en) | Automatic tuning device | |
| US4483230A (en) | Illumination level/musical tone converter | |
| US3478633A (en) | Counter resetting arrangement for rhythm accompaniment starting | |
| US4163408A (en) | Musical tuning device | |
| US5027686A (en) | Electronic metronome equipped with subtraction timer | |
| JPS5851278B2 (en) | Tempo setting device for automatic rhythm performance device | |
| US4655113A (en) | Rythm rate and tempo monitor for electronic musical instruments having automatic rhythm accompaniment | |
| US4437380A (en) | Musical envelope-producing device | |
| JPS589953B2 (en) | rhythm generator | |
| JPH0360119B2 (en) | ||
| JPS6111759Y2 (en) | ||
| US4059040A (en) | Tone-source apparatus for electronic musical instrument | |
| JPS6114054Y2 (en) | ||
| JPS5855432Y2 (en) | Electronic musical instrument sound source device | |
| JPS5815800B2 (en) | Denshigatsuki | |
| RU2734572C1 (en) | Method for determining pitch in electric musical instruments of heterodyne type | |
| JPS5912183B2 (en) | automatic rhythm playing device | |
| JPH06161440A (en) | Automatic playing device | |
| US3962944A (en) | Electronic musical instrument | |
| JPS633318B2 (en) | ||
| JPS60126698A (en) | electronic musical instruments | |
| JPS601636B2 (en) | Rhythm speed control device for automatic rhythm performance equipment | |
| JPS5882298A (en) | Envelope control circuit for electronic musical instrument | |
| JPS63273088A (en) | Random alarm timepiece |