FR2424631A1 - THYRISTOR - Google Patents

THYRISTOR

Info

Publication number
FR2424631A1
FR2424631A1 FR7812368A FR7812368A FR2424631A1 FR 2424631 A1 FR2424631 A1 FR 2424631A1 FR 7812368 A FR7812368 A FR 7812368A FR 7812368 A FR7812368 A FR 7812368A FR 2424631 A1 FR2424631 A1 FR 2424631A1
Authority
FR
France
Prior art keywords
base layer
type
transmitter
shunt
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7812368A
Other languages
French (fr)
Other versions
FR2424631B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIZ TEKHN I
Original Assignee
FIZ TEKHN I
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FIZ TEKHN I filed Critical FIZ TEKHN I
Priority to FR7812368A priority Critical patent/FR2424631A1/en
Publication of FR2424631A1 publication Critical patent/FR2424631A1/en
Application granted granted Critical
Publication of FR2424631B1 publication Critical patent/FR2424631B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors

Landscapes

  • Thyristors (AREA)

Abstract

THYRISTOR COMPRENANT UNE COUCHE DE BASE DE TYPE P FORTEMENT DOPEE ET UNE COUCHE DE BASE DE TYPE N FAIBLEMENT DOPEE PLACEES ENTRE UNE COUCHE EMETTRICE DE TYPE N ET UNE COUCHE EMETTRICE DE TYPE P. LA CONCENTRATION MOYENNE D'IMPURETES DANS LA COUCHE DE BASE 2 EST DE 110CM AU PLUS; LA JONCTION EMETTEUR-BASE EST SHUNTEE PAR DES CANAUX SHUNTS D'EMETTEUR 10 QUI S'ETENDENT DE LA COUCHE DE BASE 2 JUSQU'A LA BORNE D'AMENEE DE COURANT 5 ET SONT AGENCES EN RESEAU, LA LARGEUR DE CHACUN DES CANAUX 10 NE DEPASSANT PAS LA LONGUEUR DE DIFFUSION DES PORTEURS DANS LA COUCHE DE BASE. APPLICATION: THYRISTORS A COMMUTATION RAPIDE A HAUTE TENSION.THYRISTOR CONSISTING OF A HIGHLY DOPED P-TYPE BASE LAYER AND A LOW-DOPED N-TYPE BASE LAYER PLACED BETWEEN AN N-TYPE EMITTING LAYER AND A P-TYPE EMITTING LAYER THE AVERAGE CONCENTRATION OF IMPURITIES IN BASE LAYER 2 IS FROM 110CM TO THE MOST; THE TRANSMITTER-BASE JUNCTION IS SHUNT BY SHUNT CHANNELS FROM TRANSMITTER 10 WHICH EXTEND FROM BASE LAYER 2 TO CURRENT TERMINAL 5 AND ARE ARRANGED IN A NETWORK, THE WIDTH OF EACH OF THE 10 CHANNELS NEEDED NOT EXCEEDING THE DIFFUSION LENGTH OF THE CARRIERS IN THE BASE LAYER. APPLICATION: HIGH VOLTAGE QUICK SWITCHING THYRISTORS.

FR7812368A 1978-04-26 1978-04-26 THYRISTOR Granted FR2424631A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7812368A FR2424631A1 (en) 1978-04-26 1978-04-26 THYRISTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7812368A FR2424631A1 (en) 1978-04-26 1978-04-26 THYRISTOR

Publications (2)

Publication Number Publication Date
FR2424631A1 true FR2424631A1 (en) 1979-11-23
FR2424631B1 FR2424631B1 (en) 1980-11-07

Family

ID=9207612

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7812368A Granted FR2424631A1 (en) 1978-04-26 1978-04-26 THYRISTOR

Country Status (1)

Country Link
FR (1) FR2424631A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130669A1 (en) * 1983-04-30 1985-01-09 Kabushiki Kaisha Toshiba Gate turn off thyristor with mesh cathode structure
EP0186140A1 (en) * 1984-12-27 1986-07-02 Siemens Aktiengesellschaft Semiconductor power switch

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1406185A (en) * 1963-08-07 1965-07-16 Philips Nv Controlled rectifier and its manufacturing process
CH444975A (en) * 1966-09-27 1967-10-15 Bbc Brown Boveri & Cie Process for producing a semiconductor element with a pnpn structure with short circuits in the emitter zone
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1406185A (en) * 1963-08-07 1965-07-16 Philips Nv Controlled rectifier and its manufacturing process
CH444975A (en) * 1966-09-27 1967-10-15 Bbc Brown Boveri & Cie Process for producing a semiconductor element with a pnpn structure with short circuits in the emitter zone
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130669A1 (en) * 1983-04-30 1985-01-09 Kabushiki Kaisha Toshiba Gate turn off thyristor with mesh cathode structure
EP0186140A1 (en) * 1984-12-27 1986-07-02 Siemens Aktiengesellschaft Semiconductor power switch
US4792839A (en) * 1984-12-27 1988-12-20 Siemens Aktiengesellschaft Semiconductor power circuit breaker structure obviating secondary breakdown

Also Published As

Publication number Publication date
FR2424631B1 (en) 1980-11-07

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Legal Events

Date Code Title Description
ST Notification of lapse