CN118448971A - A high-power nanosecond ultraviolet laser - Google Patents
A high-power nanosecond ultraviolet laser Download PDFInfo
- Publication number
- CN118448971A CN118448971A CN202410322241.1A CN202410322241A CN118448971A CN 118448971 A CN118448971 A CN 118448971A CN 202410322241 A CN202410322241 A CN 202410322241A CN 118448971 A CN118448971 A CN 118448971A
- Authority
- CN
- China
- Prior art keywords
- pump
- mirror
- crystal
- light
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims abstract description 161
- 230000008878 coupling Effects 0.000 claims description 53
- 238000010168 coupling process Methods 0.000 claims description 53
- 238000005859 coupling reaction Methods 0.000 claims description 53
- 230000010355 oscillation Effects 0.000 claims description 16
- 238000005086 pumping Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910009372 YVO4 Inorganic materials 0.000 claims 1
- 239000007787 solid Substances 0.000 abstract description 3
- 239000013307 optical fiber Substances 0.000 description 15
- 238000002834 transmittance Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 230000005284 excitation Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094038—End pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094042—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Lasers (AREA)
Abstract
本发明提出了一种高功率纳秒紫外激光器，涉及固体激光器技术领域，包括沿第一泵浦源出光方向上依次设置有第一泵浦源、第一泵浦镜、第一增益晶体、第二增益晶体、第二泵浦镜以及第二泵浦源；第一泵浦源出射的第一泵浦光透过第一泵浦镜依次传输至第一增益晶体、第二增益晶体以及第二泵浦镜，第一泵浦光经第二泵浦镜反射，以使第二泵浦镜的反射光依次传输至调Q器件和第一反射镜，第二泵浦源出射的第二泵浦光透过过第二泵浦镜依次传输至第二增益晶体、第一增益晶体以及第一泵浦镜，第二泵浦光经第一泵浦镜反射，以使第一泵浦镜的反射光反射至第二反射镜；第二反射镜的反射光依次传输至三倍频晶体、二倍频晶体以及第三反射镜，以使三倍频晶体靠近第二反射镜的端面输出紫外激光。本发明有助于提升紫外激光的输出功率。
The present invention proposes a high-power nanosecond ultraviolet laser, which relates to the technical field of solid lasers, including a first pump source, a first pump mirror, a first gain crystal, a second gain crystal, a second pump mirror and a second pump source arranged in sequence along the light-emitting direction of the first pump source; the first pump light emitted by the first pump source is transmitted to the first gain crystal, the second gain crystal and the second pump mirror in sequence through the first pump mirror, the first pump light is reflected by the second pump mirror, so that the reflected light of the second pump mirror is transmitted to the Q-switched device and the first reflector in sequence, the second pump light emitted by the second pump source is transmitted to the second gain crystal, the first gain crystal and the first pump mirror in sequence through the second pump mirror, the second pump light is reflected by the first pump mirror, so that the reflected light of the first pump mirror is reflected to the second reflector; the reflected light of the second reflector is transmitted to the triple frequency crystal, the double frequency crystal and the third reflector in sequence, so that the triple frequency crystal outputs ultraviolet laser close to the end face of the second reflector. The present invention is helpful to improve the output power of ultraviolet laser.
Description
技术领域Technical Field
本发明涉及固体激光器技术领域，尤其涉及一种高功率纳秒紫外激光器。The invention relates to the technical field of solid lasers, and in particular to a high-power nanosecond ultraviolet laser.
背景技术Background technique
紫外激光器具有激光波长短，单光子能量大，能聚焦到很小光斑等独特优点，在集成电路工艺、精细激光加工、生命科学等众多方面具有独特的应用价值。在精密加工制造领域，固体纳秒紫外脉冲激光器是一个非常重要的核心光源，在高精密切割领域，高功率纳秒紫外光源则不可或缺。比如在集成电路的光刻工艺中，波长越短的紫外激光，可以获得越高的分辨率；在激光精细加工中，紫外光的单光子能量大，可以直接破坏材料的分子健或原子间连接，对材料的加工属于冷加工，不会产生熔融、碎屑、裂纹等热加工中经常出现的缺陷，因而加工质量极高。Ultraviolet lasers have unique advantages such as short laser wavelength, high single photon energy, and the ability to focus to a very small spot. They have unique application value in many areas such as integrated circuit technology, fine laser processing, and life sciences. In the field of precision processing and manufacturing, solid nanosecond ultraviolet pulse lasers are a very important core light source, and in the field of high-precision cutting, high-power nanosecond ultraviolet light sources are indispensable. For example, in the photolithography process of integrated circuits, the shorter the wavelength of ultraviolet lasers, the higher the resolution that can be obtained; in laser fine processing, the single photon energy of ultraviolet light is large, which can directly destroy the molecular bonds or atomic connections of the material. The processing of materials is cold processing, and will not produce defects such as melting, debris, and cracks that often occur in hot processing, so the processing quality is extremely high.
公开号为CN116780335A的中国专利公开了一种高光束质量和宽波长范围的全半导体紫外激光器，包括边发射半导体激发光源、面发射半导体增益介质以及基频振荡和频率转换部件，面发射半导体增益介质以及基频振荡和频率转换部件形成谐振腔；边发射半导体激发光源发出的激发光能够投射到面发射半导体增益介质上；面发射半导体增益介质能够吸收边发射半导体激发光源所发出的激发光的光子能量，并产生激光波长的受激辐射；受激辐射在谐振腔中形成基频激光振荡，并完成频率转换，最终输出为紫外激光。上述方案提供的全半导体紫外激光器仅能单独实现发光源波长的频率转换率，但无法提升输出紫外激光的输出功率，因此，提供一种高功率纳秒紫外激光器，以提升输出紫外激光的输出功率，是非常有必要的。The Chinese patent with publication number CN116780335A discloses an all-semiconductor ultraviolet laser with high beam quality and wide wavelength range, including an edge-emitting semiconductor excitation light source, a surface-emitting semiconductor gain medium, and a fundamental frequency oscillation and frequency conversion component, wherein the surface-emitting semiconductor gain medium and the fundamental frequency oscillation and frequency conversion component form a resonant cavity; the excitation light emitted by the edge-emitting semiconductor excitation light source can be projected onto the surface-emitting semiconductor gain medium; the surface-emitting semiconductor gain medium can absorb the photon energy of the excitation light emitted by the edge-emitting semiconductor excitation light source and generate stimulated radiation of the laser wavelength; the stimulated radiation forms a fundamental frequency laser oscillation in the resonant cavity, completes the frequency conversion, and finally outputs as ultraviolet laser. The all-semiconductor ultraviolet laser provided by the above scheme can only achieve the frequency conversion rate of the wavelength of the light source alone, but cannot improve the output power of the output ultraviolet laser. Therefore, it is very necessary to provide a high-power nanosecond ultraviolet laser to improve the output power of the output ultraviolet laser.
发明内容Summary of the invention
有鉴于此，本发明提出了一种高功率纳秒紫外激光器，通过双端泵浦方式提高紫外激光器泵浦功率，同时调Q器件周期性关断第一谐振腔内的基频谐振，以抑制增益晶体内的反转粒子数耗损，并释放能量以输出具有高功率的巨脉冲，，以获得更高功率的紫外激光输出。In view of this, the present invention proposes a high-power nanosecond ultraviolet laser, which increases the pump power of the ultraviolet laser by double-end pumping. At the same time, the Q-switched device periodically shuts down the fundamental frequency resonance in the first resonant cavity to suppress the inversion population loss in the gain crystal and releases energy to output giant pulses with high power, so as to obtain higher power ultraviolet laser output.
本发明提供了一种高功率纳秒紫外激光器，包括第一泵浦源、第一泵浦镜、第一增益晶体、第二增益晶体、第二泵浦镜、第二泵浦源、调Q器件、第一反射镜、第二反射镜、三倍频晶体、二倍频晶体以及第三反射镜，其中，The present invention provides a high-power nanosecond ultraviolet laser, comprising a first pump source, a first pump mirror, a first gain crystal, a second gain crystal, a second pump mirror, a second pump source, a Q-switched device, a first reflector, a second reflector, a triple frequency crystal, a double frequency crystal and a third reflector, wherein:
沿所述第一泵浦源出光方向上依次设置有所述第一泵浦源、所述第一泵浦镜、所述第一增益晶体、所述第二增益晶体、所述第二泵浦镜以及所述第二泵浦源；The first pump source, the first pump mirror, the first gain crystal, the second gain crystal, the second pump mirror and the second pump source are sequentially arranged along the light emitting direction of the first pump source;
所述第一泵浦源出射的第一泵浦光透过所述第一泵浦镜依次传输至所述第一增益晶体、所述第二增益晶体以及所述第二泵浦镜，所述第一泵浦光经所述第二泵浦镜反射，以使所述第二泵浦镜的反射光依次传输至所述调Q器件和所述第一反射镜，所述第二泵浦源出射的第二泵浦光透过过第二泵浦镜依次传输至所述第二增益晶体、所述第一增益晶体以及所述第一泵浦镜，所述第二泵浦光经所述第一泵浦镜反射，以使所述第一泵浦镜的反射光反射至所述第二反射镜，且所述第一泵浦镜、所述第二泵浦镜以及所述第一反射镜构成产生基频光振荡的第一谐振腔，所述第一泵浦光与所述第二泵浦光的波长相同；The first pump light emitted by the first pump source is transmitted through the first pump mirror in sequence to the first gain crystal, the second gain crystal and the second pump mirror, the first pump light is reflected by the second pump mirror, so that the reflected light of the second pump mirror is transmitted to the Q-switched device and the first reflector in sequence, the second pump light emitted by the second pump source is transmitted through the second pump mirror in sequence to the second gain crystal, the first gain crystal and the first pump mirror, the second pump light is reflected by the first pump mirror, so that the reflected light of the first pump mirror is reflected to the second reflector, and the first pump mirror, the second pump mirror and the first reflector constitute a first resonant cavity for generating fundamental frequency light oscillation, and the wavelength of the first pump light and the second pump light are the same;
所述第二反射镜的反射光依次传输至所述三倍频晶体、所述二倍频晶体以及所述第三反射镜，且所述第二反射镜和所述第三反射镜构成产生倍频光振荡的第二谐振腔，以使所述三倍频晶体靠近所述第二反射镜的端面输出紫外激光。The reflected light of the second reflector is transmitted to the tripled frequency crystal, the doubled frequency crystal and the third reflector in sequence, and the second reflector and the third reflector constitute a second resonant cavity that generates doubled frequency light oscillations, so that the tripled frequency crystal outputs ultraviolet laser close to the end face of the second reflector.
在以上技术方案的基础上，优选的，所述第一反射镜与所述第二泵浦镜之间的距离可调节，所述第一反射镜与所述第二泵浦镜之间形成第一束腰臂长，所述第一泵浦镜与所述第二反射镜之间的距离可调节，所述第一泵浦镜与所述第二反射镜之间形成第二束腰臂长，所述第二反射镜与所述三倍频晶体之间的距离可调节，所述第二反射镜与所述三倍频晶体之间形成第三束腰臂长，所述三倍频晶体与所述第三反射镜之间的距离可调节，所述三倍频晶体与所述第三反射镜之间形成第四束腰臂长。On the basis of the above technical solution, preferably, the distance between the first reflector and the second pump mirror is adjustable, a first beam waist arm length is formed between the first reflector and the second pump mirror, the distance between the first pump mirror and the second reflector is adjustable, a second beam waist arm length is formed between the first pump mirror and the second reflector, the distance between the second reflector and the tripled frequency crystal is adjustable, a third beam waist arm length is formed between the second reflector and the tripled frequency crystal, the distance between the tripled frequency crystal and the third reflector is adjustable, and a fourth beam waist arm length is formed between the tripled frequency crystal and the third reflector.
在以上技术方案的基础上，优选的，所述高功率纳秒紫外激光器满足以下条件：On the basis of the above technical solution, preferably, the high-power nanosecond ultraviolet laser meets the following conditions:
1.2*La<Lb<1.8*La；1.2* La < Lb <1.8* La ;
其中，La表示所述第一束腰臂长，Lb表示所述第二束腰臂长、所述第三束腰臂长以及第四束腰臂长之和。Wherein, La represents the first beam arm length, and Lb represents the sum of the second beam arm length, the third beam arm length, and the fourth beam arm length.
更进一步优选的，所述第一泵浦源和所述第一泵浦镜之间设置有第一耦合光纤和第一耦合镜组，所述第二泵浦源和所述第二泵浦镜之间设置有第二耦合光纤和第二耦合镜组。More preferably, a first coupling optical fiber and a first coupling mirror group are arranged between the first pump source and the first pump mirror, and a second coupling optical fiber and a second coupling mirror group are arranged between the second pump source and the second pump mirror.
更进一步优选的，所述第一耦合光纤和所述第二耦合光纤的芯径均为878.6nm～400μm。More preferably, the core diameters of the first coupling optical fiber and the second coupling optical fiber are both 878.6 nm to 400 μm.
更进一步优选的，所述第一泵浦镜和所述第二泵浦镜的曲率半径均为300～700mm，所述第一泵浦镜靠近所述第一泵浦源的端面镀设有泵浦光高透膜，所述第一泵浦镜背离所述第一泵浦源的端面镀设有基频光高反膜，所述第二泵浦镜靠近所述第二泵浦源的端面镀设有泵浦光高透膜，所述第二泵浦镜背离所述第二泵浦源的端面镀设有基频光高反膜。More preferably, the curvature radii of the first pump mirror and the second pump mirror are both 300-700 mm, the end face of the first pump mirror close to the first pump source is coated with a pump light high-transmittance film, the end face of the first pump mirror away from the first pump source is coated with a fundamental frequency light high-reflection film, the end face of the second pump mirror close to the second pump source is coated with a pump light high-transmittance film, and the end face of the second pump mirror away from the second pump source is coated with a fundamental frequency light high-reflection film.
更进一步优选的，所述第一增益晶体和所述第二增益晶体的两端面均镀设有泵浦光高透膜和基频光高透膜，所述第一增益晶体和所述第二增益晶体均为Nd:YVO4晶体，所述第一增益晶体和所述第二增益晶体浓度均为0.2％～0.27％，所述第一增益晶体和所述第二增益晶体的尺寸均为3mm*3mm*16mm。Further preferably, both end faces of the first gain crystal and the second gain crystal are coated with a pump light high-transmittance film and a fundamental frequency light high-transmittance film, the first gain crystal and the second gain crystal are both Nd:YVO4 crystals, the concentrations of the first gain crystal and the second gain crystal are both 0.2% to 0.27%, and the sizes of the first gain crystal and the second gain crystal are both 3mm*3mm*16mm.
更进一步优选的，所述二倍频晶体和所述三倍频晶体的两端面均镀设有基频光高透膜和倍频光高透膜，所述二倍频晶体的长度为8～12mm，所述三倍频晶体的长度为15～20mm，所述三倍频晶体靠近所述第二反射镜的端面为斜面。Further preferably, both end faces of the doubled frequency crystal and the tripled frequency crystal are coated with high-transmittance films for fundamental frequency light and doubled frequency light, the length of the doubled frequency crystal is 8 to 12 mm, the length of the tripled frequency crystal is 15 to 20 mm, and the end face of the tripled frequency crystal close to the second reflector is a bevel.
更进一步优选的，所述调Q器件为声光Q开关或电光Q开关，所述调Q器件的频率为0～200kHz。More preferably, the Q-switching device is an acousto-optic Q-switch or an electro-optic Q-switch, and the frequency of the Q-switching device is 0 to 200 kHz.
更进一步优选的，还包括底座和水冷系统，所述第一泵浦源、所述第一泵浦镜、所述第一增益晶体、所述第二增益晶体、所述第二泵浦镜、所述第二泵浦源、所述调Q器件、所述第一反射镜、所述第二反射镜、所述三倍频晶体、所述二倍频晶体以及所述第三反射镜均设置于所述底座上，并通过所述水冷系统进行控温和散热。More preferably, it also includes a base and a water cooling system, wherein the first pump source, the first pump mirror, the first gain crystal, the second gain crystal, the second pump mirror, the second pump source, the Q-switched device, the first reflector, the second reflector, the triple frequency crystal, the double frequency crystal and the third reflector are all arranged on the base, and the temperature is controlled and the heat is dissipated by the water cooling system.
本发明提供的一种高功率纳秒紫外激光器相对于现有技术具有以下有益效果：The high-power nanosecond ultraviolet laser provided by the present invention has the following beneficial effects compared with the prior art:
(1)通过设置第一泵浦镜、第二泵浦镜以及第一反射镜构成产生基频光振荡的第一谐振腔，以实现基频光的振荡激发，并采用双端泵浦方式以提高紫外激光器泵浦功率，从而获得更高功率的基频光输出，并且能够通过调Q器件周期性关断第一谐振腔内的基频谐振，以抑制增益晶体内的反转粒子数耗损，并释放能量以输出具有高功率的巨脉冲，同时第二反射镜与第三反射镜构成产生倍频光振荡的第二谐振腔，第二谐振腔接收第一谐振腔释放的巨脉冲，经过第二谐振腔内二倍频晶体和三倍频晶体进行倍频和和频，以实现高功率纳秒紫外光线的输出；(1) A first resonant cavity for generating fundamental frequency light oscillation is formed by arranging a first pump mirror, a second pump mirror and a first reflector to realize oscillation excitation of fundamental frequency light, and a double-end pumping method is adopted to increase the pumping power of the ultraviolet laser, so as to obtain a higher power fundamental frequency light output, and the fundamental frequency resonance in the first resonant cavity can be periodically turned off by a Q-switching device to suppress the inversion population loss in the gain crystal, and release energy to output a high-power giant pulse, and at the same time, the second reflector and the third reflector constitute a second resonant cavity for generating doubled frequency light oscillation, the second resonant cavity receives the giant pulse released by the first resonant cavity, and performs frequency doubling and sum frequency through the doubled frequency crystal and the tripled frequency crystal in the second resonant cavity, so as to realize the output of high-power nanosecond ultraviolet light;
(2)高功率纳秒紫外激光的臂长关系满足1.2*La<Lb<1.8*La，即通过第一束腰长度调节第二束腰臂长、第三束腰臂长以及第四束腰臂长之和，通过改变不同束腰臂长在第一谐振腔和第二谐振腔内的长度，以达到调整第一谐振腔和第二谐振腔腔长效果，进从而增加第一谐振腔和第二谐振腔因振荡产生脉冲激光的脉，同时压缩倍频晶体体处激光光斑，提高泵浦光和基频光的转换效率。(2) The arm length relationship of the high-power nanosecond ultraviolet laser satisfies 1.2* La < Lb <1.8* La , that is, the sum of the second beam waist arm length, the third beam waist arm length and the fourth beam waist arm length is adjusted by the first beam waist length, and the lengths of different beam waist arm lengths in the first resonant cavity and the second resonant cavity are changed to achieve the effect of adjusting the cavity lengths of the first resonant cavity and the second resonant cavity, thereby increasing the pulses of the pulsed laser generated by the oscillation of the first resonant cavity and the second resonant cavity, and at the same time compressing the laser spot at the frequency doubling crystal, thereby improving the conversion efficiency of pump light and fundamental frequency light.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
图1为本发明提供的高功率纳秒紫外激光器的光路示意图；FIG1 is a schematic diagram of the optical path of a high-power nanosecond ultraviolet laser provided by the present invention;
图2为本发明提供的50W紫外重频功率脉宽曲线图。FIG. 2 is a 50W ultraviolet repetition rate power pulse width curve diagram provided by the present invention.
附图标记说明：1、第一泵浦源；2、第一泵浦镜；3、第一增益晶体；4、第二增益晶体；5、第二泵浦镜；6、第二泵浦源；7、调Q器件；8、第一反射镜；9、第二反射镜；10、三倍频晶体；11、二倍频晶体；12、第三反射镜；13、第一耦合光纤；14、第一耦合镜组；15、第二耦合光纤；16、第二耦合镜组；17、吸光筒。Explanation of the accompanying drawings: 1. first pump source; 2. first pump mirror; 3. first gain crystal; 4. second gain crystal; 5. second pump mirror; 6. second pump source; 7. Q-switched device; 8. first reflector; 9. second reflector; 10. triple frequency crystal; 11. double frequency crystal; 12. third reflector; 13. first coupling fiber; 14. first coupling mirror group; 15. second coupling fiber; 16. second coupling mirror group; 17. light absorbing tube.
具体实施方式Detailed ways
下面将结合本发明实施方式，对本发明实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式仅仅是本发明一部分实施方式，而不是全部的实施方式。基于本发明中的实施方式，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
如图1所示，本发明提供了一种高功率纳秒紫外激光器，包括第一泵浦源1、第一泵浦镜2、第一增益晶体3、第二增益晶体4、第二泵浦镜5、第二泵浦源6、调Q器件7、第一反射镜8、第二反射镜9、三倍频晶体10、二倍频晶体11以及第三反射镜12，其中，As shown in FIG1 , the present invention provides a high-power nanosecond ultraviolet laser, comprising a first pump source 1, a first pump mirror 2, a first gain crystal 3, a second gain crystal 4, a second pump mirror 5, a second pump source 6, a Q-switched device 7, a first reflector 8, a second reflector 9, a triple frequency crystal 10, a double frequency crystal 11 and a third reflector 12, wherein:
沿第一泵浦源1出光方向上依次设置有第一泵浦源1、第一泵浦镜2、第一增益晶体3、第二增益晶体4、第二泵浦镜5以及第二泵浦源6。The first pump source 1 , the first pump mirror 2 , the first gain crystal 3 , the second gain crystal 4 , the second pump mirror 5 and the second pump source 6 are arranged in sequence along the light emitting direction of the first pump source 1 .
在本实施例中，第一泵浦源1和第二泵浦源6均采用出射光线波长相同的半导体激光器，在其他实施例中也可选用光纤激光器。In this embodiment, the first pump source 1 and the second pump source 6 are both semiconductor lasers with the same wavelength of emitted light. In other embodiments, optical fiber lasers may also be used.
第一泵浦源1出射的第一泵浦光透过第一泵浦镜2依次传输至第一增益晶体3、第二增益晶体4以及第二泵浦镜5，第一泵浦光经第二泵浦镜5反射，以使第二泵浦镜5的反射光依次传输至调Q器件7和第一反射镜8，第二泵浦源6出射的第二泵浦光透过过第二泵浦镜5依次传输至第二增益晶体4、第一增益晶体3以及第一泵浦镜2，第二泵浦光经第一泵浦镜2反射，以使第一泵浦镜2的反射光反射至第二反射镜9，且第一泵浦镜2、第二泵浦镜5以及第一反射镜8构成产生基频光振荡的第一谐振腔，第一泵浦光与第二泵浦光的波长相同。The first pump light emitted by the first pump source 1 is transmitted through the first pump mirror 2 to the first gain crystal 3, the second gain crystal 4 and the second pump mirror 5 in sequence. The first pump light is reflected by the second pump mirror 5, so that the reflected light of the second pump mirror 5 is transmitted to the Q-switched device 7 and the first reflector 8 in sequence. The second pump light emitted by the second pump source 6 is transmitted through the second pump mirror 5 to the second gain crystal 4, the first gain crystal 3 and the first pump mirror 2 in sequence. The second pump light is reflected by the first pump mirror 2, so that the reflected light of the first pump mirror 2 is reflected to the second reflector 9. The first pump mirror 2, the second pump mirror 5 and the first reflector 8 constitute a first resonant cavity for generating fundamental frequency light oscillations. The wavelengths of the first pump light and the second pump light are the same.
在一个示例中，第一泵浦源1和第一泵浦镜2之间设置有第一耦合光纤13和第一耦合镜组14，第二泵浦源6和第二泵浦镜5之间设置有第二耦合光纤15和第二耦合镜组16。其中，第一耦合光纤13和第二耦合光纤15的芯径均为878.6nm～400μm，第一耦合镜组14和第二耦合镜组16均镀有泵浦光增透膜，使第一耦合镜组14和第二耦合镜组16的出光比例为1:2～1:4，且第一耦合镜组14和第二耦合镜组16均至少包括两个相同的平凸透镜或两个相同的双凸透镜。In one example, a first coupling optical fiber 13 and a first coupling mirror group 14 are arranged between the first pump source 1 and the first pump mirror 2, and a second coupling optical fiber 15 and a second coupling mirror group 16 are arranged between the second pump source 6 and the second pump mirror 5. The core diameters of the first coupling optical fiber 13 and the second coupling optical fiber 15 are both 878.6 nm to 400 μm, and the first coupling mirror group 14 and the second coupling mirror group 16 are both coated with pump light anti-reflection films, so that the light output ratio of the first coupling mirror group 14 and the second coupling mirror group 16 is 1:2 to 1:4, and the first coupling mirror group 14 and the second coupling mirror group 16 each include at least two identical plano-convex lenses or two identical biconvex lenses.
在本实施例中，第一泵浦镜2和第二泵浦镜5的曲率半径均为300～700mm，第一泵浦镜2靠近第一泵浦源1的端面镀设有泵浦光高透膜，第一泵浦镜2背离第一泵浦源1的端面镀设有基频光高反膜，第二泵浦镜5靠近第二泵浦源6的端面镀设有泵浦光高透膜，第二泵浦镜5背离第二泵浦源6的端面镀设有基频光高反膜。In this embodiment, the curvature radius of the first pump mirror 2 and the second pump mirror 5 are both 300-700 mm, the end face of the first pump mirror 2 close to the first pump source 1 is coated with a pump light high-transmittance film, the end face of the first pump mirror 2 away from the first pump source 1 is coated with a fundamental frequency light high-reflection film, the end face of the second pump mirror 5 close to the second pump source 6 is coated with a pump light high-transmittance film, and the end face of the second pump mirror 5 away from the second pump source 6 is coated with a fundamental frequency light high-reflection film.
在本实施例中，第一增益晶体3和第二增益晶体4的两端面均镀设有泵浦光高透膜和基频光高透膜，第一增益晶体3和第二增益晶体4均为Nd:YVO4晶体，以使泵浦光单程吸收率为83％～90％，第一增益晶体3和第二增益晶体4浓度均为0.2％～0.27％，第一增益晶体3和第二增益晶体4的尺寸均为3mm*3mm*16mm。In this embodiment, both end surfaces of the first gain crystal 3 and the second gain crystal 4 are plated with a pump light high transmittance film and a fundamental frequency light high transmittance film, and the first gain crystal 3 and the second gain crystal 4 are both Nd:YVO4 crystals, so that the single-pass absorption rate of the pump light is 83% to 90%, the concentrations of the first gain crystal 3 and the second gain crystal 4 are both 0.2% to 0.27%, and the sizes of the first gain crystal 3 and the second gain crystal 4 are both 3mm*3mm*16mm.
可以理解的是，第一增益晶体3和第二增益晶体4还可以为Yb:YAG晶体、Nd:YLF晶体、Nd:GdVO4晶体、Nd:YAG晶体、Nd:YAP晶体中的任意一种。具体的，相对设置的第一泵浦源1和第二泵浦源6产生泵浦光，经过对应设置的耦合光纤和耦合透镜组将泵浦光斑耦合到第一增益晶体3和第二增益晶体4内，对第一增益晶体3和第二增益晶体4进行双端泵浦，产生基频光，以使基频光在第一谐振腔进行腔内振荡。It is understandable that the first gain crystal 3 and the second gain crystal 4 can also be any one of Yb:YAG crystal, Nd:YLF crystal, Nd:GdVO4 crystal, Nd:YAG crystal, and Nd:YAP crystal. Specifically, the first pump source 1 and the second pump source 6 that are arranged relatively generate pump light, and the pump light spot is coupled into the first gain crystal 3 and the second gain crystal 4 through the correspondingly arranged coupling optical fiber and coupling lens group, and the first gain crystal 3 and the second gain crystal 4 are double-ended pumped to generate fundamental frequency light, so that the fundamental frequency light oscillates in the first resonant cavity.
在本实施例中，第一泵浦源1出射的泵浦光通过第一耦合光纤13和第一耦合透镜组将泵浦光经第一耦合镜耦合入第一谐振腔内，第二泵浦源6出射的泵浦光通过第二耦合光纤15和第二耦合透镜组将泵浦光经第二耦合镜耦合入第一谐振腔内，由泵浦光经第一增益晶体3和第二增益晶体4吸收并在第一耦合镜和第二耦合镜之间往复振荡以形成基频光。同时由于第二耦合镜的反射作用，部分泵浦光和基频光进入调Q器件7后再经第一反射镜8反射至第一耦合镜和第二耦合镜之间重复振荡，调Q器件7周期性关断腔内基频光谐振，抑制第一增益晶体3和第二增益晶体4的反转粒子数耗损，以达到储能的效果。并且在第一耦合镜的反射作用和第一谐振腔的能量释放下，第一耦合镜将第一谐振腔内产生的巨脉冲输送至第二谐振腔内。In this embodiment, the pump light emitted by the first pump source 1 is coupled into the first resonant cavity through the first coupling optical fiber 13 and the first coupling lens group through the first coupling mirror, and the pump light emitted by the second pump source 6 is coupled into the first resonant cavity through the second coupling optical fiber 15 and the second coupling lens group through the second coupling mirror. The pump light is absorbed by the first gain crystal 3 and the second gain crystal 4 and oscillates back and forth between the first coupling mirror and the second coupling mirror to form fundamental frequency light. At the same time, due to the reflection effect of the second coupling mirror, part of the pump light and fundamental frequency light enter the Q-switching device 7 and then reflect through the first reflector 8 to repeatedly oscillate between the first coupling mirror and the second coupling mirror. The Q-switching device 7 periodically shuts off the resonance of the fundamental frequency light in the cavity, suppresses the inversion population loss of the first gain crystal 3 and the second gain crystal 4, so as to achieve the effect of energy storage. And under the reflection effect of the first coupling mirror and the energy release of the first resonant cavity, the first coupling mirror transmits the giant pulse generated in the first resonant cavity to the second resonant cavity.
优选地，调Q器件7为声光Q开关或电光Q开关，调Q器件7的频率为0～200kHz。具体的，第一泵浦源1和第二泵浦源6出射的泵浦光经过对应设置的耦合光纤和耦合透镜组将泵浦光斑耦合到第一增益晶体3和第二增益晶体4内的基频光通过声光调Q开关或电光调Q开关进行调制，以实现高功率高重复频率基频光运转。Preferably, the Q-switching device 7 is an acousto-optic Q-switch or an electro-optic Q-switch, and the frequency of the Q-switching device 7 is 0 to 200 kHz. Specifically, the pump light emitted by the first pump source 1 and the second pump source 6 is coupled to the fundamental frequency light in the first gain crystal 3 and the second gain crystal 4 through the correspondingly arranged coupling optical fiber and coupling lens group, and is modulated by the acousto-optic Q-switching switch or the electro-optic Q-switching switch to achieve high-power and high-repetition-frequency fundamental frequency light operation.
第二反射镜9的反射光依次传输至三倍频晶体10、二倍频晶体11以及第三反射镜12，且第二反射镜9和第三反射镜12构成产生倍频光振荡的第二谐振腔，以使三倍频晶体10靠近第二反射镜9的端面输出紫外激光。The reflected light of the second reflector 9 is transmitted to the tripled frequency crystal 10, the doubled frequency crystal 11 and the third reflector 12 in sequence, and the second reflector 9 and the third reflector 12 constitute a second resonant cavity for generating doubled frequency light oscillations, so that the tripled frequency crystal 10 outputs ultraviolet laser near the end face of the second reflector 9.
在本实施例中，二倍频晶体11和三倍频晶体10的两端面均镀设有基频光高透膜和倍频光高透膜，二倍频晶体11的长度为8～12mm，三倍频晶体10的长度为15～20mm，三倍频晶体10靠近第二反射镜9的端面为斜面，该面做布角57.4°以实现基频水平偏振光、倍频水平偏振光以及倍频竖直偏振光分离。In this embodiment, both end faces of the doubled frequency crystal 11 and the tripled frequency crystal 10 are coated with high-transmittance films for fundamental frequency light and high-transmittance films for doubled frequency light. The length of the doubled frequency crystal 11 is 8 to 12 mm, and the length of the tripled frequency crystal 10 is 15 to 20 mm. The end face of the tripled frequency crystal 10 close to the second reflector 9 is a bevel, and the angle of the face is 57.4° to achieve separation of fundamental frequency horizontally polarized light, doubled frequency horizontally polarized light, and doubled frequency vertically polarized light.
其中，二倍频采用一类相位匹配o+o→e，三倍频采用二类相位匹配o+e→o，第二谐振腔内1064nm为水平偏振光(即基频光)，532nm为竖直偏振光(即倍频光)，355nm为水平偏振光。基频水平偏振光、倍频竖直偏振光以及倍频水平偏振光在三倍频晶体10内的对应折射率分别为1.5656、1.6136、1.5973，进而算得基频水平偏振光、倍频竖直偏振光以及倍频水平偏振光分光出射角度分别为57.5115°、60.3844°以59.3816°，即基频水平偏振光、倍频竖直偏振光以及倍频水平偏振光可在三倍频晶体10的布角57.4°时产生分离。并且在倍频竖直偏振光(532nm)出光方向上设置吸光筒17，以吸收不相干的光束。Among them, the double frequency adopts the first type of phase matching o+o→e, and the triple frequency adopts the second type of phase matching o+e→o. In the second resonant cavity, 1064nm is horizontally polarized light (i.e., fundamental frequency light), 532nm is vertically polarized light (i.e., double frequency light), and 355nm is horizontally polarized light. The corresponding refractive indices of the fundamental frequency horizontal polarized light, double frequency vertical polarized light, and double frequency horizontal polarized light in the triple frequency crystal 10 are 1.5656, 1.6136, and 1.5973, respectively. It is further calculated that the splitting angles of the fundamental frequency horizontal polarized light, double frequency vertical polarized light, and double frequency horizontal polarized light are 57.5115°, 60.3844°, and 59.3816°, respectively, that is, the fundamental frequency horizontal polarized light, double frequency vertical polarized light, and double frequency horizontal polarized light can be separated when the layout angle of the triple frequency crystal 10 is 57.4°. In addition, a light absorbing tube 17 is arranged in the light emitting direction of the frequency-doubled vertically polarized light (532 nm) to absorb incoherent light beams.
可以理解的是，二倍频晶体11和三倍频晶体10可以选用KTP、PPLN、LBO、BBO中的任意一种，但不限于此，根据实际所需选择，采用临界或非临界相位匹配方式，第一增益晶体3和第二增益晶体4的尺寸为3mm×3mm×15mm或3mm×3mm×12mm或者其他尺寸，其两端面分别镀设基频光高透膜和倍频光高透膜，通过半导体制冷片控温，温控精度优于±0.1℃。It can be understood that the doubled frequency crystal 11 and the tripled frequency crystal 10 can be any one of KTP, PPLN, LBO, and BBO, but are not limited thereto. They can be selected according to actual needs, and critical or non-critical phase matching methods can be adopted. The sizes of the first gain crystal 3 and the second gain crystal 4 are 3mm×3mm×15mm or 3mm×3mm×12mm or other sizes, and the two end surfaces thereof are respectively coated with a high-transmittance film for fundamental frequency light and a high-transmittance film for doubled frequency light. The temperature is controlled by a semiconductor refrigeration sheet, and the temperature control accuracy is better than ±0.1°C.
在本实施例中，第一反射镜8与第二泵浦镜5之间的距离可调节，第一反射镜8与第二泵浦镜5之间形成第一束腰臂长，第一泵浦镜2与第二反射镜9之间的距离可调节，第一泵浦镜2与第二反射镜9之间形成第二束腰臂长，第二反射镜9与三倍频晶体10之间的距离可调节，第二反射镜9与三倍频晶体10之间形成第三束腰臂长，三倍频晶体10与第三反射镜12之间的距离可调节，三倍频晶体10与第三反射镜12之间形成第四束腰臂长。In this embodiment, the distance between the first reflector 8 and the second pump mirror 5 is adjustable, and a first beam waist arm length is formed between the first reflector 8 and the second pump mirror 5, the distance between the first pump mirror 2 and the second reflector 9 is adjustable, and a second beam waist arm length is formed between the first pump mirror 2 and the second reflector 9, the distance between the second reflector 9 and the tripled frequency crystal 10 is adjustable, and a third beam waist arm length is formed between the second reflector 9 and the tripled frequency crystal 10, the distance between the tripled frequency crystal 10 and the third reflector 12 is adjustable, and a fourth beam waist arm length is formed between the tripled frequency crystal 10 and the third reflector 12.
高功率纳秒紫外激光器满足以下条件：High power nanosecond UV lasers meet the following conditions:
1.2*La<Lb<1.8*La1.2*La<Lb<1.8*La
其中，La表示第一束腰臂长，Lb表示第二束腰臂长、第三束腰臂长以及第四束腰臂长之和。Wherein, La represents the first beam waist arm length, and Lb represents the sum of the second beam waist arm length, the third beam waist arm length, and the fourth beam waist arm length.
高功率纳秒紫外激光的臂长关系满足1.2*La<Lb<1.8*La，即通过第一束腰长度调节第二束腰臂长、第三束腰臂长以及第四束腰臂长之和，通过改变不同束腰臂长在第一谐振腔和第二谐振腔内的长度，以达到调整第一谐振腔和第二谐振腔腔长效果，进从而增加第一谐振腔和第二谐振腔因振荡产生脉冲激光的宽度，同时压缩倍频晶体体处激光光斑，提高泵浦光和基频光的转换效率。The arm length relationship of the high-power nanosecond ultraviolet laser satisfies 1.2*La<Lb<1.8*La, that is, the sum of the second beam waist arm length, the third beam waist arm length and the fourth beam waist arm length is adjusted by the first beam waist length, and the lengths of different beam waist arm lengths in the first resonant cavity and the second resonant cavity are changed to achieve the effect of adjusting the cavity length of the first resonant cavity and the second resonant cavity, thereby increasing the width of the pulsed laser generated by the oscillation of the first resonant cavity and the second resonant cavity, and at the same time compressing the laser spot at the frequency doubling crystal, thereby improving the conversion efficiency of pump light and fundamental frequency light.
工作原理：对称设置的第一泵浦源1和第二泵浦源6通过对应的第一耦合光纤13和第二耦合光纤15传输泵浦光，并将泵浦光通过第一耦合透镜和第二耦合透镜组对应耦合至第一耦合镜和第二耦合镜，同时将能量传递到第一增益晶体3和第二增益晶体4内，以产生粒子数反转，使得第一增益晶体3和第二增益晶体4自发发射产生波长为1064nm的激光，其中沿着光轴传输的光子在由第一耦合镜、第二耦合镜、第一反射镜8、第二反射镜9以及第三反射镜12构成的谐振腔中反射，在经过第一增益晶体3和第二增益晶体4时放大并形成激光，调Q器件7周期性关断腔内1064nm谐振，抑制第一增益晶体3和第二增益晶体4内的反转粒子数耗损，进行储能。谐振腔中储存的能量一定时间后释放产生巨脉冲，该巨脉冲经过二倍频晶体11和三倍频晶体10进行倍频和和频，分别获得532nm和355nm的激光，由于波长为1064nm的激光、波长为532nm的激光以及波长为355nm的激光在三倍频晶体10内的折射率，使波长为1064nm的激光、波长为532nm的激光以及波长为355nm的激光以不同角度出射，产生分离。Working principle: The symmetrically arranged first pump source 1 and second pump source 6 transmit pump light through the corresponding first coupling optical fiber 13 and second coupling optical fiber 15, and couple the pump light to the first coupling mirror and the second coupling mirror through the first coupling lens and the second coupling lens group, and transfer energy to the first gain crystal 3 and the second gain crystal 4 to produce a population inversion, so that the first gain crystal 3 and the second gain crystal 4 spontaneously emit and generate a laser with a wavelength of 1064nm, wherein the photons transmitted along the optical axis are reflected in the resonant cavity formed by the first coupling mirror, the second coupling mirror, the first reflector 8, the second reflector 9 and the third reflector 12, and are amplified and form laser when passing through the first gain crystal 3 and the second gain crystal 4, and the Q-switching device 7 periodically shuts off the 1064nm resonance in the cavity, suppresses the inversion population loss in the first gain crystal 3 and the second gain crystal 4, and stores energy. The energy stored in the resonant cavity is released after a certain period of time to generate a giant pulse, which is frequency doubled and summed by the doubled frequency crystal 11 and the tripled frequency crystal 10 to obtain 532nm and 355nm lasers respectively. Due to the refractive index of the laser with a wavelength of 1064nm, the laser with a wavelength of 532nm and the laser with a wavelength of 355nm in the tripled frequency crystal 10, the laser with a wavelength of 1064nm, the laser with a wavelength of 532nm and the laser with a wavelength of 355nm are emitted at different angles, resulting in separation.
通过设置第一泵浦镜2、第二泵浦镜5以及第一反射镜8构成产生基频光振荡的第一谐振腔，以实现基频光的振荡激发，并采用双端泵浦方式以提高紫外激光器泵浦功率，从而获得更高功率的基频光输出，并且能够通过调Q器件7周期性关断第一谐振腔内的基频谐振，以抑制增益晶体内的反转粒子数耗损，同时第二反射镜9与第三反射镜12构成产生倍频光振荡的第二谐振腔，第二谐振腔接收第一谐振腔释放的巨脉冲，经过第二谐振腔内二倍频晶体11和三倍频晶体10进行倍频和和频，以实现高功率纳秒紫外光线的输出。A first resonant cavity for generating fundamental frequency light oscillations is formed by setting a first pump mirror 2, a second pump mirror 5 and a first reflector 8 to realize oscillation excitation of fundamental frequency light, and a double-end pumping method is adopted to increase the pumping power of the ultraviolet laser, so as to obtain a higher power fundamental frequency light output, and the fundamental frequency resonance in the first resonant cavity can be periodically shut down by a Q-switching device 7 to suppress the inversion population loss in the gain crystal, and at the same time, the second reflector 9 and the third reflector 12 constitute a second resonant cavity for generating doubled frequency light oscillations, and the second resonant cavity receives the giant pulse released by the first resonant cavity, and performs frequency doubling and sum frequency through a doubled frequency crystal 11 and a tripled frequency crystal 10 in the second resonant cavity, so as to realize the output of high-power nanosecond ultraviolet light.
如图2所示，图2为50W紫外重频功率脉宽曲线图，本方案提供的最大紫外脉宽为46ns，最小紫外脉宽为16.1ns，最大紫外功率为54W，最小紫外功率为17W。可以理解的是，在紫外重频为50～200kHz之间时高功率纳秒紫外激光器的紫外功率逐渐由21W上升至54W，达到了紫外激光器高功率的需求。As shown in Figure 2, Figure 2 is a 50W ultraviolet repetition power pulse width curve. The maximum ultraviolet pulse width provided by this solution is 46ns, the minimum ultraviolet pulse width is 16.1ns, the maximum ultraviolet power is 54W, and the minimum ultraviolet power is 17W. It can be understood that when the ultraviolet repetition rate is between 50 and 200kHz, the ultraviolet power of the high-power nanosecond ultraviolet laser gradually increases from 21W to 54W, meeting the high-power requirement of the ultraviolet laser.
优选地，还包括底座和水冷系统，第一泵浦源1、第一泵浦镜2、第一增益晶体3、第二增益晶体4、第二泵浦镜5、第二泵浦源6、调Q器件7、第一反射镜8、第二反射镜9、三倍频晶体10、二倍频晶体11以及第三反射镜12均设置于底座上，并通过水冷系统进行控温和散热，以便激光器正常且高效的工作。Preferably, it also includes a base and a water cooling system, wherein the first pump source 1, the first pump mirror 2, the first gain crystal 3, the second gain crystal 4, the second pump mirror 5, the second pump source 6, the Q-switched device 7, the first reflector 8, the second reflector 9, the triple frequency crystal 10, the double frequency crystal 11 and the third reflector 12 are all arranged on the base, and the temperature is controlled and the heat is dissipated by the water cooling system, so that the laser can work normally and efficiently.
以上所述仅为本发明的较佳实施方式而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410322241.1A CN118448971B (en) | 2024-03-20 | 2024-03-20 | A high-power nanosecond ultraviolet laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410322241.1A CN118448971B (en) | 2024-03-20 | 2024-03-20 | A high-power nanosecond ultraviolet laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118448971A true CN118448971A (en) | 2024-08-06 |
| CN118448971B CN118448971B (en) | 2024-12-17 |
Family
ID=92318501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410322241.1A Active CN118448971B (en) | 2024-03-20 | 2024-03-20 | A high-power nanosecond ultraviolet laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118448971B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111193169A (en) * | 2020-02-28 | 2020-05-22 | 深圳市海目星激光智能装备股份有限公司 | Ultraviolet laser based on twin crystal structure |
| CN120165290A (en) * | 2025-05-16 | 2025-06-17 | 北京卓镭激光技术有限公司 | A laser amplifier |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040146076A1 (en) * | 2003-01-24 | 2004-07-29 | Dudley David R. | Diode pumped laser with intracavity harmonics |
| CN101055398A (en) * | 2006-04-13 | 2007-10-17 | 深圳市大族激光科技股份有限公司 | End surface pumped continuous red light laser |
| CN101179176A (en) * | 2006-11-09 | 2008-05-14 | 深圳市大族激光科技股份有限公司 | Semiconductor dual-end pumped third harmonic ultraviolet laser |
| CN101232148A (en) * | 2008-02-22 | 2008-07-30 | 苏州德龙激光有限公司 | Design method of semiconductor diode both-end pumping high power UV laser |
| US20110122896A1 (en) * | 2009-11-23 | 2011-05-26 | Guilin Mao | High-power diode end-pumped solid-state uv laser |
| CN202695966U (en) * | 2011-12-12 | 2013-01-23 | 湖北工业大学 | Double-end-pumped intracavity sum-frequency 355nm-wavelength ultraviolet solid-state laser |
| CN106848821A (en) * | 2017-04-13 | 2017-06-13 | 中国科学技术大学 | A kind of pump laser |
| CN108933378A (en) * | 2018-09-21 | 2018-12-04 | 深圳市杰普特光电股份有限公司 | Bicrystal ultraviolet laser |
| CN218123954U (en) * | 2022-08-11 | 2022-12-23 | 福州紫凤光电科技有限公司 | Single longitudinal mode ultraviolet all-solid-state laser |
-
2024
- 2024-03-20 CN CN202410322241.1A patent/CN118448971B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040146076A1 (en) * | 2003-01-24 | 2004-07-29 | Dudley David R. | Diode pumped laser with intracavity harmonics |
| CN101055398A (en) * | 2006-04-13 | 2007-10-17 | 深圳市大族激光科技股份有限公司 | End surface pumped continuous red light laser |
| CN101179176A (en) * | 2006-11-09 | 2008-05-14 | 深圳市大族激光科技股份有限公司 | Semiconductor dual-end pumped third harmonic ultraviolet laser |
| CN101232148A (en) * | 2008-02-22 | 2008-07-30 | 苏州德龙激光有限公司 | Design method of semiconductor diode both-end pumping high power UV laser |
| US20110122896A1 (en) * | 2009-11-23 | 2011-05-26 | Guilin Mao | High-power diode end-pumped solid-state uv laser |
| CN202695966U (en) * | 2011-12-12 | 2013-01-23 | 湖北工业大学 | Double-end-pumped intracavity sum-frequency 355nm-wavelength ultraviolet solid-state laser |
| CN106848821A (en) * | 2017-04-13 | 2017-06-13 | 中国科学技术大学 | A kind of pump laser |
| CN108933378A (en) * | 2018-09-21 | 2018-12-04 | 深圳市杰普特光电股份有限公司 | Bicrystal ultraviolet laser |
| CN218123954U (en) * | 2022-08-11 | 2022-12-23 | 福州紫凤光电科技有限公司 | Single longitudinal mode ultraviolet all-solid-state laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111193169A (en) * | 2020-02-28 | 2020-05-22 | 深圳市海目星激光智能装备股份有限公司 | Ultraviolet laser based on twin crystal structure |
| CN120165290A (en) * | 2025-05-16 | 2025-06-17 | 北京卓镭激光技术有限公司 | A laser amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118448971B (en) | 2024-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6453844B2 (en) | High-efficiency single-pass harmonic generator for circular output beams | |
| CN118448971B (en) | A high-power nanosecond ultraviolet laser | |
| CN108365515A (en) | A kind of single-ended pumped high-power burst pulse basic mode laser and its working method | |
| US7088749B2 (en) | Green welding laser | |
| JP2015228499A (en) | External diffusion amplifier | |
| CN112003118A (en) | 222nm wavelength deep ultraviolet pulse laser source | |
| CN105470804A (en) | Diode pumped solid state laser (DPL) and debugging method therefor | |
| Kojima et al. | Stabilization of a high-power diode-side-pumped intracavity-frequency-doubled cw Nd: YAG laser by compensating for thermal lensing of a KTP crystal and Nd: YAG rods | |
| CN104269728A (en) | Semiconductor laser of solid-state ultraviolet laser | |
| CN107946891B (en) | A kind of high-power ultraviolet solid-state laser | |
| CN106129801A (en) | Quasiconductor end-pumping intracavity frequency doubling high power UV laser | |
| CN100499297C (en) | Method for generating third harmonic laser | |
| CN106058632A (en) | Pulse-energy-adjustable passive Q-switched Raman laser system based on bonding crystals | |
| CN115939919B (en) | Solid laser based on Kerr lens mode locking | |
| CN112636146A (en) | High-power mode-locked disc laser | |
| CN102244345A (en) | Tunable titanium jewelry laser of 588nm yellow light pump | |
| CN115084980A (en) | High-power nanosecond extra-cavity quintupling frequency laser | |
| CN202616598U (en) | Passive mode-locking laser device | |
| CN205911599U (en) | Q raman laser system is transferred passively to pulse energy adjustable based on bonded crystal | |
| CN109687273B (en) | Laser device | |
| CN218123954U (en) | Single longitudinal mode ultraviolet all-solid-state laser | |
| CN104917053A (en) | V-shaped resonator and laser based on V-shaped resonator | |
| CN112688151A (en) | 266nm deep ultraviolet solid laser | |
| CN116780335A (en) | Full-semiconductor ultraviolet laser with high beam quality and wide wavelength range | |
| CN209418973U (en) | a laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |