CN113595508A - Power amplifier - Google Patents
Power amplifier Download PDFInfo
- Publication number
- CN113595508A CN113595508A CN202110786946.5A CN202110786946A CN113595508A CN 113595508 A CN113595508 A CN 113595508A CN 202110786946 A CN202110786946 A CN 202110786946A CN 113595508 A CN113595508 A CN 113595508A
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- Prior art keywords
- module
- sub
- negative feedback
- gain
- power amplifier
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
本发明涉及无线通信技术领域，公开了一种功率放大器，包括放大电路和用于调整放大电路增益的负反馈电路；所述放大电路包括三极管，所述负反馈电路的一端与三级管的基极连接另一端与三极管的集电极连接；所述负反馈电路包括负反馈深度调节模块和隔直模块，所述负反馈深度调节模块包括阻抗子模块、增益信号输入子模块和增益信号馈入子模块，所述增益信号馈入子模块用于将从增益信号输入子模块获取到的增益信号馈入阻抗子模块，以使阻抗子模块的阻值发生变化。有益效果：通过改变增益输入子模块输入电压的大小，从而改变阻抗子模块的阻值，进而调整负反馈深度和功率放大器增益，实现了对功率放大器的外部控制调节。
The invention relates to the technical field of wireless communication, and discloses a power amplifier, comprising an amplifier circuit and a negative feedback circuit for adjusting the gain of the amplifier circuit; the amplifier circuit includes a triode, and one end of the negative feedback circuit is connected to the base of the triode. The other end of the pole connection is connected to the collector of the triode; the negative feedback circuit includes a negative feedback depth adjustment module and a DC blocking module, and the negative feedback depth adjustment module includes an impedance sub-module, a gain signal input sub-module and a gain signal feed-in sub-module The gain signal feeding sub-module is used for feeding the gain signal obtained from the gain signal input sub-module into the impedance sub-module, so as to change the resistance value of the impedance sub-module. Beneficial effects: By changing the magnitude of the input voltage of the gain input sub-module, the resistance value of the impedance sub-module is changed, and the negative feedback depth and the gain of the power amplifier are adjusted, thereby realizing the external control and adjustment of the power amplifier.
Description
Technical Field
The present invention relates to the field of wireless communication technologies, and in particular, to a power amplifier.
Background
The power amplifier is a core component of a wireless communication system, and has the functions of amplifying a radio frequency signal and radiating the signal through an antenna to realize wireless transmission. Power amplifiers are also the main energy consuming components of modern communication systems and require dynamic adjustment of their gain to ensure communication quality while achieving power savings.
In a conventional power amplifier architecture, a negative feedback circuit is often disposed between a base and a collector of a triode, and a fixed resistor is disposed in the negative feedback circuit to determine a negative feedback depth and an amplifier gain. After the circuit is set, the resistance value of the resistor cannot be changed, the negative feedback depth and the gain of the power amplifier cannot be adjusted, the power amplifier cannot meet the requirement of dynamically adjusting the gain in a communication system, and the communication quality and energy conservation cannot be guaranteed.
Therefore, it is necessary to improve the existing power amplifier so that the gain and the negative feedback depth of the power amplifier can be adjusted to meet the use requirement of the communication system.
Disclosure of Invention
The purpose of the invention is: a power amplifier is provided, which can adjust the gain and the negative feedback depth of the power amplifier and meet the use requirement of a communication system.
In order to achieve the above object, the present invention provides a power amplifier including an amplifying circuit and a negative feedback circuit for adjusting a gain of the amplifying circuit; the amplifying circuit comprises a triode, one end of the negative feedback circuit is connected with the base electrode of the triode, and the other end of the negative feedback circuit is connected with the collector electrode of the triode.
The negative feedback circuit comprises a negative feedback depth adjusting module and a blocking module, the negative feedback depth adjusting module is used for adjusting the negative feedback depth and the overall gain of the amplifier, and the blocking module is used for feeding back an alternating current signal of a collector electrode of the triode.
The negative feedback depth adjusting module comprises an impedance sub-module, a gain signal input sub-module and a gain signal feed-in sub-module, wherein the gain signal feed-in sub-module is used for feeding the gain signal acquired from the gain signal input sub-module into the impedance sub-module so as to change the resistance value of the impedance sub-module.
Further, the impedance submodule includes a diode and a first resistor, and the gain signal feed submodule feeds the gain signal into the diode and the first resistor.
Furthermore, the gain signal feed-in sub-module comprises a first inductor and a second inductor, a first port of the first inductor is connected with a first port of the impedance sub-module, a second port of the first inductor is connected with the gain signal input sub-module, a first port of the second inductor is connected with a second port of the impedance sub-module, and a second port of the second inductor is grounded.
Furthermore, the blocking module comprises a first blocking module and a second blocking module, the first blocking module is connected with a first port of the negative feedback depth adjusting module, and the second blocking module is connected with a second port of the negative feedback depth adjusting module.
Furthermore, the power amplifier further comprises a bias circuit, and the bias circuit is connected with the base electrode of the triode.
Furthermore, an input end alternating current feed module is arranged between the amplifying circuit and the signal input end.
Furthermore, an output end alternating current feed module is arranged between the amplifying circuit and the signal output end.
Further, the amplifier further comprises a power supply module, and the power supply module is used for supplying power to the amplifier.
Furthermore, the power supply module is connected with a first port of a third inductor, and a second port of the third inductor is connected with a collector of the triode.
Compared with the prior art, the power amplifier of the embodiment of the invention has the beneficial effects that: the resistance value of the impedance submodule is changed by changing the input voltage of the gain input submodule, so that the negative feedback depth and the gain of the power amplifier are adjusted, and the external control and adjustment of the power amplifier are realized. When the power amplifier is applied to a communication system, the input voltage can be adjusted according to the system requirement, so that the gain of the power amplifier is correspondingly changed, the requirement of the communication system is met, the communication quality is ensured, and the energy consumption is saved. The negative feedback network of the invention is provided with the diode and the resistor for carrying out direct current feed at the same time, thereby enlarging the voltage control range.
Drawings
Fig. 1 is a schematic diagram of the overall structure of a power amplifier of the present invention;
fig. 2 is a schematic structural diagram of a negative feedback circuit of a power amplifier according to the present invention.
In the figure, 1, a negative feedback circuit; 2. an amplifying circuit; 31. an impedance sub-module; 32. the gain signal is fed into the submodule; 33. a gain signal input submodule; 4. and a blocking module.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Example 1:
as shown in fig. 1 and fig. 2, the present invention discloses a power amplifier, which comprises an amplifying circuit 2 and a negative feedback circuit 1 for adjusting the gain of the amplifying circuit 2; the amplifying circuit 2 comprises a triode, one end of the negative feedback circuit 1 is connected with the base electrode of the triode, and the other end of the negative feedback circuit is connected with the collector electrode of the triode.
The negative feedback circuit 1 comprises a negative feedback depth adjusting module and a blocking module 4, the negative feedback depth adjusting module is used for adjusting the negative feedback depth and the overall gain of the amplifier, and the blocking module 4 is used for feeding back an alternating current signal of a collector electrode of the triode.
The negative feedback depth adjustment module comprises an impedance sub-module 31, a gain signal input sub-module 33, and a gain signal feed sub-module 32, wherein the gain signal feed sub-module 32 is configured to feed a gain signal acquired from the gain signal input sub-module 33 to the impedance sub-module 31, so that a resistance value of the impedance sub-module 31 changes.
In this embodiment, the impedance submodule 31 includes a diode and a first resistor, and the gain signal feeding submodule 32 is configured to feed a gain signal to the diode and the first resistor. The first resistor is a fixed resistor, the gain signal may be a voltage signal, and when the gain signal changes, the resistance value of the diode changes correspondingly, so that the overall resistance value of the impedance submodule 31 is changed; when the resistance value of the impedance submodule 31 changes, the gain of the amplifier also changes correspondingly. A person skilled in the art can thus determine by experiment the appropriate diodes for the impedance submodule 31 in the amplifier circuit.
In this embodiment, the working principle of the impedance submodule 31 for adjusting the gain of the amplifier is as follows:
the equivalent resistance Rfb of the negative feedback circuit 1 is Rd1+ R1. In the formula, Rd1 is an equivalent resistance value of the diode D1, and the resistance value is controlled by the on-state current of the diode, that is, Rd1 is Vd1/Id1 (c). Vd1 is the conduction voltage drop of the diode, Id1 is the conduction current of the diode, which is also the current flowing through resistor R1. Meanwhile, because the diode D1 and the resistor R1 are connected in series, VD is VD1+ R1 Id 1. The three formulas are arranged to obtain: rfb is (Vd 1/(VD-Vd 1) +1) × R1. The conduction voltage drop Vd1 of the diode in the equation is determined by the process, the CMOS process is generally about 0.7V, the GaAs process is generally about 1.1V, and the diodes of different processes can be selected according to the actual needs. After the resistor R1 is determined, the equivalent resistor Rfb of the negative feedback circuit 1 is determined by VD voltage, and the equivalent resistor Rfb of the negative feedback circuit 1 can be adjusted by adjusting the VD voltage, so that the negative feedback depth is regulated and controlled, and the gain of the power amplifier can be controlled. And the control range of VD may be from VD1 to infinity.
According to the working principle, the resistance value of the impedance submodule 31 in the amplifier can be adjusted linearly in the technical scheme of the invention, so that the gain of the amplifier can be adjusted more linearly, and the adjustment of the gain of the amplifier has higher linearity and stability.
In this embodiment, the gain signal feed-in sub-module 32 includes a first inductor and a second inductor, a first port of the first inductor is connected to the first port of the impedance sub-module 31, a second port of the first inductor is connected to the gain signal input sub-module 33, a first port of the second inductor is connected to the second port of the impedance sub-module 31, and a second port of the second inductor is grounded. Referring to fig. 1 or 2, the gain signal is fed from the VD port, which is the output of the gain signal input sub-module 33. The first inductor and the second inductor feed VD control signals to the diode and the first resistor and simultaneously block the leakage of the alternating current feedback signals to the outside.
In this embodiment, the impedance submodule 31 includes a first resistor and a diode, the gain signal is a voltage signal, and an anode terminal of the diode is connected to the VD port through a first inductor; the anode end of the diode is a first port of the impedance submodule, the first port of the first resistor is connected with the cathode end of the diode, and the second port of the first resistor is a second port of the impedance submodule.
In this embodiment, the blocking module 4 includes a first blocking module and a second blocking module, the first blocking module is connected to the first port of the negative feedback depth adjusting module, and the second blocking module is connected to the second port of the negative feedback depth adjusting module. The first blocking module and the second blocking module are both capacitors and are used for feeding back Q1 collector alternating-current signals and simultaneously blocking VCC.
In this embodiment, the power amplifier further includes a bias circuit, and the bias circuit is connected to the base of the transistor.
In this embodiment, an input ac feeding module is further disposed between the amplifying circuit 2 and the signal input terminal. The input end alternating current feed module is a capacitor and is used for feeding in radio frequency signals and blocking VB bias signals.
In this embodiment, an output ac feeding module is further disposed between the amplifying circuit 2 and the signal output terminal. The output end alternating current feed module is a capacitor and is used for feeding the amplified alternating current signal outwards and simultaneously blocking a VCC direct current signal.
In this embodiment, the amplifier further includes a power supply module, and the power supply module is configured to supply power to the amplifier.
In this embodiment, the power supply module is connected to a first port of a third inductor, and a second port of the third inductor is connected to a collector of the transistor.
In the present embodiment, the resistance value of the impedance submodule 31 in the negative feedback circuit 1 can be adjusted, so as to adjust the negative feedback depth and the amplifier gain, and the adjustment of the amplifier gain has higher linearity and stability.
Example 2:
referring to fig. 1, a power amplifier circuit according to the present invention is generally described, and includes: the circuit comprises a triode Q1, capacitors C1, C2, C3, C4, resistors R1 and R2, inductors L1, L2, L3 and a diode D1. The radio frequency signal is fed in from RFIN port and is exported by RFOUT port, and amplifier power is fed in from VCC port, and amplifier bias signal is fed in from VB port, and the gain control signal is fed in from VD port. The triode Q1 realizes signal amplification; the capacitor C3 realizes the feeding of the radio frequency signal and the blocking of the VB bias signal; the resistor R1, the capacitors C1 and C2, the diode D1, and the inductors L1 and L2 form a negative feedback network to improve the linearity and stability of the amplifier and control the overall gain of the amplifier. The value of the resistor R1 and the resistance of the diode D1 jointly influence the negative feedback depth and the overall amplifier gain, wherein the resistance of the diode D1 is influenced by the magnitude of VD feed voltage. The L1 and L2 inductors feed VD control signals to the diode D1 and the resistor R1 and simultaneously block the leakage of the alternating current feedback signals to the outside. Capacitors C1 and C2 are used to feed back the ac signal at the collector of transistor Q1 while blocking the VCC, VB, and VD dc signals. Resistor R2 adjusts the amplifier bias state. Inductor L3 realizes VCC DC feed and blocks AC signal leakage, and capacitor C4 realizes that the amplified AC signal is fed outwards and blocks VCC DC signal.
To sum up, the embodiment of the present invention provides a power amplifier, which has the following beneficial effects: the resistance value of the impedance submodule 31 is changed by changing the input voltage of the gain input submodule 33, so that the negative feedback depth and the gain of the power amplifier are adjusted, and the external control and adjustment of the power amplifier are realized. When the power amplifier is applied to a communication system, the input voltage can be adjusted according to the system requirement, so that the gain of the power amplifier is correspondingly changed, the requirement of the communication system is met, the communication quality is ensured, and the energy consumption is saved. The negative feedback network of the invention is provided with the diode and the resistor for carrying out direct current feed at the same time, thereby enlarging the voltage control range.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110786946.5A CN113595508A (en) | 2021-07-12 | 2021-07-12 | Power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110786946.5A CN113595508A (en) | 2021-07-12 | 2021-07-12 | Power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN113595508A true CN113595508A (en) | 2021-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110786946.5A Pending CN113595508A (en) | 2021-07-12 | 2021-07-12 | Power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025138356A1 (en) * | 2023-12-28 | 2025-07-03 | 宜确半导体（苏州）有限公司 | Active negative feedback amplification circuit and electronic product |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020093377A1 (en) * | 2000-11-27 | 2002-07-18 | Keiichi Sakuno | Power amplification circuit and communication device using the same |
| CN106788298A (en) * | 2015-11-20 | 2017-05-31 | 厦门宇臻集成电路科技有限公司 | A kind of power amplification electrical equipment gain switching circuit |
| CN107592082A (en) * | 2017-09-26 | 2018-01-16 | 上海华虹宏力半导体制造有限公司 | A kind of bimodulus double frequency secondary current is multiplexed low-noise amplifier |
| CN207652399U (en) * | 2017-12-28 | 2018-07-24 | 海能达通信股份有限公司 | A kind of novel gain control circuit, radio circuit and mobile terminal |
| CN112653402A (en) * | 2020-12-21 | 2021-04-13 | 中国电子科技集团公司第二十四研究所 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
-
2021
- 2021-07-12 CN CN202110786946.5A patent/CN113595508A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020093377A1 (en) * | 2000-11-27 | 2002-07-18 | Keiichi Sakuno | Power amplification circuit and communication device using the same |
| CN106788298A (en) * | 2015-11-20 | 2017-05-31 | 厦门宇臻集成电路科技有限公司 | A kind of power amplification electrical equipment gain switching circuit |
| CN107592082A (en) * | 2017-09-26 | 2018-01-16 | 上海华虹宏力半导体制造有限公司 | A kind of bimodulus double frequency secondary current is multiplexed low-noise amplifier |
| CN207652399U (en) * | 2017-12-28 | 2018-07-24 | 海能达通信股份有限公司 | A kind of novel gain control circuit, radio circuit and mobile terminal |
| CN112653402A (en) * | 2020-12-21 | 2021-04-13 | 中国电子科技集团公司第二十四研究所 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025138356A1 (en) * | 2023-12-28 | 2025-07-03 | 宜确半导体（苏州）有限公司 | Active negative feedback amplification circuit and electronic product |
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Application publication date: 20211102 |