CN112701150A - Semiconductor structure - Google Patents

Semiconductor structure Download PDF

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Publication number
CN112701150A
CN112701150A CN201911010030.XA CN201911010030A CN112701150A CN 112701150 A CN112701150 A CN 112701150A CN 201911010030 A CN201911010030 A CN 201911010030A CN 112701150 A CN112701150 A CN 112701150A
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China
Prior art keywords
doping
shaped
doped
region
regions
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简士杰
李家豪
杨定儒
刘家慎
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Vanguard International Semiconductor Corp
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Vanguard International Semiconductor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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Abstract

The present invention provides a semiconductor structure, comprising: a substrate; a strip-shaped first doped region formed in the substrate; the strip-shaped second doped regions are formed in the substrate and are respectively positioned among the plurality of strip-shaped first doped regions, wherein the doping type of the strip-shaped first doped regions is opposite to that of the strip-shaped second doped regions; a third doped region formed in the substrate and surrounding the strip-shaped first doped region and the strip-shaped second doped region, wherein the doping type of the third doped region is the same as that of the strip-shaped second doped region; and a fourth doped region formed in the substrate and located under the strip-shaped first doped region, the strip-shaped second doped region and the third doped region, wherein the doping type of the fourth doped region is the same as that of the strip-shaped second doped region. The invention can provide a semiconductor structure which can improve the junction breakdown voltage of a high-voltage diode element and maintain the electrical stability of other high-voltage elements in the same circuit system.

Description

Semiconductor structure
Technical Field
The present invention relates to a semiconductor structure, and more particularly, to a semiconductor structure having a stripe-shaped doped region.
Background
In a circuit system including a high voltage device, if a high voltage diode (HV diode) device is to be added additionally due to functional considerations, an N-well region is disposed below the HV diode device to form an isolation structure between the HV diode device and a substrate. However, the N-well region may cause a reduction in junction breakdown voltage (junction breakdown voltage) of the high voltage diode device, such that the high voltage diode device cannot meet the requirement of device operation.
At present, adjusting the concentration of the N well region is one of the methods for improving the junction breakdown voltage. However, although this method can moderately increase the junction breakdown voltage of the high voltage diode device, it will cause the breakdown voltage of other high voltage devices in the same circuit system to decrease, thereby affecting the electrical stability of these devices.
Therefore, it is desirable to develop a semiconductor structure that can increase the junction breakdown voltage of the high voltage diode device and maintain the electrical stability of other high voltage devices in the same circuit system.
Disclosure of Invention
According to an embodiment of the present invention, there is provided a semiconductor structure including: a substrate; a plurality of strip-shaped first doped regions formed in the substrate; a plurality of strip-shaped second doped regions formed in the substrate and respectively located between the plurality of strip-shaped first doped regions, wherein the doping type of the plurality of strip-shaped first doped regions is opposite to the doping type of the plurality of strip-shaped second doped regions; a third doped region formed in the substrate and surrounding the plurality of strip-shaped first doped regions and the plurality of strip-shaped second doped regions, wherein the doping type of the third doped region is the same as the doping type of the plurality of strip-shaped second doped regions; and a fourth doped region formed in the substrate and located below the plurality of strip-shaped first doped regions, the plurality of strip-shaped second doped regions and the third doped region, wherein the doping type of the fourth doped region is the same as the doping type of the plurality of strip-shaped second doped regions.
In some embodiments, the substrate is a P-type or N-type substrate. In some embodiments, when the substrate is a P-type substrate, the doping type of the plurality of stripe-shaped first doping regions is P-type, the doping type of the plurality of stripe-shaped second doping regions is N-type, the doping type of the third doping region is N-type, and the doping type of the fourth doping region is N-type. In some embodiments, when the substrate is an N-type substrate, the doping type of the plurality of stripe-shaped first doping regions is N-type, the doping type of the plurality of stripe-shaped second doping regions is P-type, the doping type of the third doping region is P-type, and the doping type of the fourth doping region is P-type. In some embodiments, the widths of the plurality of stripe-shaped first doped regions and the plurality of stripe-shaped second doped regions are the same. In some embodiments, the depths of the plurality of stripe-shaped first doped regions and the plurality of stripe-shaped second doped regions in the substrate are the same. In some embodiments, the depth of the third doped region in the substrate is greater than the depths of the plurality of stripe-shaped first doped regions and the plurality of stripe-shaped second doped regions in the substrate. In some embodiments, the doping concentrations of the plurality of stripe-shaped first doping regions, the plurality of stripe-shaped second doping regions and the third doping region are the same. In some embodiments, the doping concentration of the fourth doping region is lower than the doping concentrations of the plurality of stripe-shaped first doping regions, the plurality of stripe-shaped second doping regions and the third doping region. In some embodiments, the fourth doped region is a continuous doped region. In some embodiments, the plurality of stripe-shaped first doped regions are high-voltage pwell regions, and the plurality of stripe-shaped second doped regions and the third doped region are high-voltage nwell regions. In some embodiments, the plurality of stripe-shaped first doped regions, the plurality of stripe-shaped second doped regions and the third doped region form a plurality of high voltage diodes.
According to an embodiment of the present invention, there is provided a semiconductor structure including: a substrate; a first doped region formed in the substrate; a second doped region formed in the substrate and surrounding the first doped region, wherein the first doped region has a doping type opposite to that of the second doped region; and a plurality of strip-shaped third doped regions formed in the substrate and located below the first doped region and the second doped region, wherein the doping types of the plurality of strip-shaped third doped regions are the same as the doping type of the second doped region.
In some embodiments, the substrate is a P-type or N-type substrate. In some embodiments, when the substrate is a P-type substrate, the doping type of the first doping region is P-type, the doping type of the second doping region is N-type, and the doping types of the strip-shaped third doping regions are N-type. In some embodiments, when the substrate is an N-type substrate, the doping type of the first doping region is N-type, the doping type of the second doping region is P-type, and the doping types of the strip-shaped third doping regions are P-type. In some embodiments, the first doped region and the second doped region have the same depth in the substrate. In some embodiments, the doping concentration of the first doping region is the same as that of the second doping region. In some embodiments, the doping concentration of the plurality of stripe-shaped third doping regions is lower than the doping concentration of the first doping region and the second doping region. In some embodiments, the widths of the plurality of stripe-shaped third doped regions are the same. In some embodiments, the plurality of stripe-shaped third doped regions are separated from each other. In some embodiments, the first doped region is a high voltage P-well region and the second doped region is a high voltage N-well region. In some embodiments, the first doped region and the second doped region form a plurality of high voltage diodes (HV diodes).
The invention replaces the traditional high voltage P well region (HVPW) with whole extension doping by adjusting the doping interval to form a plurality of strip-shaped (strip) doping regions, and forms a special high voltage diode (HV diode) structure with a plurality of high voltage N well regions (HVNW) arranged at intervals. The arrangement of the plurality of strip-shaped doped regions greatly increases the junction area of PN, so that the generated electric field can be effectively dispersed when the high-voltage diode operates, and the Breakdown Voltage (BV) of the high-voltage diode can be greatly improved by over 80 percent even in the presence of a deep N well region (DNW). In addition, the invention can directly introduce the high-voltage diode structure without changing MOS manufacturing process, injection condition and mask combination, and does not influence the Breakdown Voltage (BV) of other high-voltage elements arranged in the same circuit system with the high-voltage diode structure, thereby ensuring the electrical stability of the high-voltage elements and further maintaining the stability and efficiency of the whole circuit.
Drawings
FIG. 1 is a top view of a semiconductor structure, according to one embodiment of the present invention;
FIG. 2 is a cross-sectional view of the semiconductor structure of FIG. 1 along line A-A';
FIG. 3 is a top view of a semiconductor structure, according to one embodiment of the present invention;
FIG. 4 is a cross-sectional view of the semiconductor structure of FIG. 3 along line B-B';
fig. 5 shows Breakdown Voltage (BV) values of a semiconductor structure according to an embodiment of the invention.
Description of the symbols
10. 100 semiconductor structure
12. 120 substrate
14a, 14b, 14c, 14d, 14e, 14f, 14g strip-shaped first doping region
16a, 16b, 16c, 16d, 16e, 16f strip-shaped second doping region
18 third doped region
20 fourth doped region
140 first doped region
160 second doped region
180a, 180b, 180c, 180d, 180e, 180f, 180g strip-shaped third doped regions
H1 depth of stripe-shaped first doped region (depth of first doped region)
H2 depth of stripe-shaped second doped region (depth of second doped region)
Depth of H3 third doped region
Width of W1 stripe-shaped first doped region
Width of W2 stripe-shaped second doped region
WNWidth of strip-shaped third doped region
Detailed Description
Referring to fig. 1 and 2, a semiconductor structure 10 is provided according to an embodiment of the present invention. Fig. 1 is a top view of a semiconductor structure 10. FIG. 2 is a cross-sectional view taken along line A-A' of FIG. 2.
As shown in fig. 1 and fig. 2, the semiconductor structure 10 includes a substrate 12, a plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), a plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), a third doped region 18, and a fourth doped region 20. A plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) are formed in the substrate 12. A plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) are formed in the substrate 12 and respectively located between the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14 g). For example, the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) and the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) are arranged at intervals. In fig. 1 and 2, two ends of the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) and the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) which are arranged at intervals are the stripe-shaped first doped regions (14a, 14 g). The third doped region 18 is formed in the substrate 12, surrounds the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) and the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), and is substantially in contact with the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) and the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16 f). The fourth doped region 20 is formed in the substrate 12, under the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), and the third doped region 18, and substantially contacts the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), and the third doped region 18. In some embodiments, the doping type of the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) is opposite to the doping type of the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16 f). The doping pattern of the third doping region 18 is the same as the doping pattern of the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16 f). The doping type of the fourth doping region 20 is the same as the doping type of the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16 f).
In fig. 1 and 2, the doping types of the substrate 12, the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16f), the third doping region 18, and the fourth doping region 20 are as follows, the substrate 12 is a P-type semiconductor substrate, the doping types of the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) are P-type, the doping types of the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16f) are N-type, the doping type of the third doping region 18 is N-type, and the doping type of the fourth doping region 20 is N-type. In some embodiments, the substrate 12, the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), the third doped region 18, and the fourth doped region 20 may be doped by any suitable P-type dopant or N-type dopant.
In fig. 1 and 2, the width W1 of the stripe-shaped first doped region (14a, 14b, 14c, 14d, 14e, 14f, 14g) is the same as the width W2 of the stripe-shaped second doped region (16a, 16b, 16c, 16d, 16e, 16 f). The depth H1 of the stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) in the substrate 12 is the same as the depth H2 of the stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) in the substrate 12, and the depth H3 of the third doped region 18 in the substrate 12 is greater than the depth H1 of the stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) in the substrate 12 and the depth H2 of the stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) in the substrate 12. In some embodiments, the depth H3 of the third doped region 18 in the substrate 12 is the same as the depth H1 of the stripe-shaped first doped region (14a, 14b, 14c, 14d, 14e, 14f, 14g) in the substrate 12 and the depth H2 of the stripe-shaped second doped region (16a, 16b, 16c, 16d, 16e, 16f) in the substrate 12.
In fig. 1 and fig. 2, the doping concentrations of the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16f) and the third doping region 18 are the same, and the doping concentration of the fourth doping region 20 is lower than the doping concentrations of the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16f) and the third doping region 18. In some embodiments, the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), the third doped region 18, and the fourth doped region 20 may be doped with appropriate doping concentrations according to product requirements.
In fig. 1 and 2, the fourth doped region 20 is a continuous doped region, that is, the fourth doped region 20 located under the strip-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the strip-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) and the third doped region 18 exhibits a continuous doping pattern. The stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) are high voltage P-well regions (HVPW), and the stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) and the third doped region 18 are high voltage N-well regions (HVNW). The plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), and the third doped region 18 constitute a plurality of high voltage diodes (HV diode), and the fourth doped region 20 serves as an isolation structure between the high voltage diodes and the substrate 12.
Still referring to fig. 1 and 2, a semiconductor structure 10 is provided according to another embodiment of the present invention. Fig. 1 is a top view of a semiconductor structure 10. FIG. 2 is a schematic cross-sectional view taken along line A-A' of FIG. 1.
As shown in fig. 1 and fig. 2, the semiconductor structure 10 includes a substrate 12, a plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), a plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), a third doped region 18, and a fourth doped region 20. A plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) are formed in the substrate 12. A plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) are formed in the substrate 12 and respectively located between the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14 g). For example, the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) and the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) are arranged at intervals. In fig. 1 and 2, two ends of the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) and the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) which are arranged at intervals are the stripe-shaped first doped regions (14a, 14 g). The third doped region 18 is formed in the substrate 12, surrounds the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) and the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), and is substantially in contact with the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) and the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16 f). The fourth doped region 20 is formed in the substrate 12, under the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), and the third doped region 18, and substantially contacts the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), and the third doped region 18. In some embodiments, the doping type of the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) is opposite to the doping type of the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16 f). The doping pattern of the third doping region 18 is the same as the doping pattern of the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16 f). The doping type of the fourth doping region 20 is the same as the doping type of the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16 f).
In fig. 1 and 2, the doping types of the substrate 12, the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16f), the third doping region 18, and the fourth doping region 20 are as follows, the substrate 12 is an N-type semiconductor substrate, the doping types of the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) are N-type, the doping types of the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16f) are P-type, the doping type of the third doping region 18 is P-type, and the doping type of the fourth doping region 20 is P-type. In some embodiments, the substrate 12, the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), the third doped region 18, and the fourth doped region 20 may be doped by any suitable P-type dopant or N-type dopant.
In fig. 1 and 2, the width W1 of the stripe-shaped first doped region (14a, 14b, 14c, 14d, 14e, 14f, 14g) is the same as the width W2 of the stripe-shaped second doped region (16a, 16b, 16c, 16d, 16e, 16 f). The depth H1 of the stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) in the substrate 12 is the same as the depth H2 of the stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) in the substrate 12, and the depth H3 of the third doped region 18 in the substrate 12 is greater than the depth H1 of the stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) in the substrate 12 and the depth H2 of the stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) in the substrate 12. In some embodiments, the depth H3 of the third doped region 18 in the substrate 12 is the same as the depth H1 of the stripe-shaped first doped region (14a, 14b, 14c, 14d, 14e, 14f, 14g) in the substrate 12 and the depth H2 of the stripe-shaped second doped region (16a, 16b, 16c, 16d, 16e, 16f) in the substrate 12.
In fig. 1 and fig. 2, the doping concentrations of the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16f) and the third doping region 18 are the same, and the doping concentration of the fourth doping region 20 is lower than the doping concentrations of the plurality of stripe-shaped first doping regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doping regions (16a, 16b, 16c, 16d, 16e, 16f) and the third doping region 18. In some embodiments, the plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), the third doped region 18, and the fourth doped region 20 may be doped with appropriate doping concentrations according to product requirements.
In fig. 1 and 2, the fourth doped region 20 is a continuous doped region, that is, the fourth doped region 20 located under the strip-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the strip-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) and the third doped region 18 exhibits a continuous doping pattern. The stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g) are high voltage nwell regions (HVNW), and the stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f) and the third doped region 18 are high voltage pwell regions (HVPW). The plurality of stripe-shaped first doped regions (14a, 14b, 14c, 14d, 14e, 14f, 14g), the plurality of stripe-shaped second doped regions (16a, 16b, 16c, 16d, 16e, 16f), and the third doped region 18 constitute a plurality of high voltage diodes (HV diode), and the fourth doped region 20 serves as an isolation structure between the high voltage diodes and the substrate 12.
Referring to fig. 3 and 4, a semiconductor structure 100 is provided according to an embodiment of the invention. Fig. 3 is a top view of semiconductor structure 100. FIG. 4 is a cross-sectional view taken along line B-B' of FIG. 3.
As shown in fig. 3 and 4, the semiconductor structure 100 includes a substrate 120, a first doping region 140, a second doping region 160, and a plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180 g). The first doping region 140 is formed in the substrate 120. The second doped region 160 is formed in the substrate 120, surrounds the first doped region 140, and is substantially in contact with the first doped region 140. A plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are formed in the substrate 120 under the first doped region 140 and the second doped region 160 and substantially contact the first doped region 140 and the second doped region 160. In some embodiments, the doping type of the first doping region 140 is opposite to the doping type of the second doping region 160. The doping type of the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) is the same as the doping type of the second doping region 160.
In fig. 3 and 4, the doping types of the substrate 120, the first doping region 140, the second doping region 160, and the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are as follows, the substrate 120 is a P-type semiconductor substrate, the doping type of the first doping region 140 is P-type, the doping type of the second doping region 160 is N-type, and the doping types of the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are N-type. In some embodiments, the substrate 120, the first doping region 140, the second doping region 160, and the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) may be formed by doping any suitable P-type dopant or N-type dopant.
In fig. 3 and 4, the depth H1 of the first doped region 140 in the substrate 120 is the same as the depth H2 of the second doped region 160 in the substrate 120. In some embodiments, the depth H1 of the first doped region 140 in the substrate 120 is different from the depth H2 of the second doped region 160 in the substrate 120, for example, the depth H2 of the second doped region 160 in the substrate 120 is greater than the depth H1 of the first doped region 140 in the substrate 120.
In fig. 3 and 4, the doping concentrations of the first doping region 140 and the second doping region 160 are the same, and the doping concentrations of the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are lower than the doping concentrations of the first doping region 140 and the second doping region 160. In some embodiments, the first doping region 140, the second doping region 160, and the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) may be provided with appropriate doping concentrations according to product requirements.
In fig. 3 and 4, the widths W of the plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g)NThe same is true. The plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are doped regions separated from each other, i.e., the plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) located under the first doped region 140 and the second doped region 160 exhibit a separated doping pattern (e.g., the plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are separated by the substrate 120). The first doped region 140 is a high voltage P-well region (HVPW) and the second doped region 160 is a high voltage N-well region (HVNW). The first and second doped regions 140 and 160 form a plurality of high voltage diodes (HV diode), and a plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) as the high voltage diodesAn isolation structure between the diode and the substrate 120.
Still referring to fig. 3 and 4, a semiconductor structure 100 is provided according to another embodiment of the present invention. Fig. 3 is a top view of semiconductor structure 100. FIG. 4 is a cross-sectional view taken along line B-B' of FIG. 3.
As shown in fig. 3 and 4, the semiconductor structure 100 includes a substrate 120, a first doping region 140, a second doping region 160, and a plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180 g). The first doping region 140 is formed in the substrate 120. The second doped region 160 is formed in the substrate 120, surrounds the first doped region 140, and is substantially in contact with the first doped region 140. A plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are formed in the substrate 120 under the first doped region 140 and the second doped region 160 and substantially contact the first doped region 140 and the second doped region 160. In some embodiments, the doping type of the first doping region 140 is opposite to the doping type of the second doping region 160. The doping type of the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) is the same as the doping type of the second doping region 160.
In fig. 3 and 4, the doping types of the substrate 120, the first doping region 140, the second doping region 160, and the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are as follows, the substrate 120 is an N-type semiconductor substrate, the doping type of the first doping region 140 is an N-type, the doping type of the second doping region 160 is a P-type, and the doping types of the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are a P-type. In some embodiments, the substrate 120, the first doping region 140, the second doping region 160, and the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) may be formed by doping any suitable P-type dopant or N-type dopant.
In fig. 3 and 4, the depth H1 of the first doped region 140 in the substrate 120 is the same as the depth H2 of the second doped region 160 in the substrate 120. In some embodiments, the depth H1 of the first doped region 140 in the substrate 120 is different from the depth H2 of the second doped region 160 in the substrate 120, for example, the depth H2 of the second doped region 160 in the substrate 120 is greater than the depth H1 of the first doped region 140 in the substrate 120.
In fig. 3 and 4, the doping concentrations of the first doping region 140 and the second doping region 160 are the same, and the doping concentrations of the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are lower than the doping concentrations of the first doping region 140 and the second doping region 160. In some embodiments, the first doping region 140, the second doping region 160, and the plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) may be provided with appropriate doping concentrations according to product requirements.
In fig. 3 and 4, the widths W of the plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g)NThe same is true. The plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are doped regions separated from each other, i.e., the plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) located under the first doped region 140 and the second doped region 160 exhibit a separated doping pattern (e.g., the plurality of stripe-shaped third doped regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) are separated by the substrate 120). The first doped region 140 is a high voltage P-well region (HVPW) and the second doped region 160 is a high voltage N-well region (HVNW). The first doping region 140 and the second doping region 160 constitute a plurality of high voltage diodes (HV diodes), and a plurality of stripe-shaped third doping regions (180a, 180b, 180c, 180d, 180e, 180f, 180g) serve as an isolation structure between the high voltage diodes and the substrate 120.
Example 1
Testing of Breakdown Voltage (BV) of high Voltage diodes
Referring to fig. 5, in the present embodiment, both the conventional high voltage diode (HVdiode) and the high voltage diode (HVdiode) of the present invention are tested for Breakdown Voltage (BV) at the same time. The conventional high-voltage diode structure herein includes a high-voltage P-well region (HVPW), a high-voltage N-well region (HVNW), and a deep N-well region (DNW), wherein the high-voltage P-well region (HVPW) is a continuous doped region extending over the entire surface, the high-voltage N-well region (HVNW) surrounds the high-voltage P-well region (HVPW), and the deep N-well region (DNW) is located under the high-voltage P-well region (HVPW) and the high-voltage N-well region (HVNW). The high voltage diode structure of the present invention includes a plurality of stripe-shaped high voltage P-well regions (HVPW), a plurality of stripe-shaped high voltage N-well regions (HVNW), a high voltage N-well region (HVNW), and a deep N-well region (DNW), wherein the plurality of stripe-shaped high voltage P-well regions (HVPW) and the plurality of stripe-shaped high voltage N-well regions (HVNW) are spaced apart from each other, the high voltage N-well region (HVNW) surrounds the plurality of stripe-shaped high voltage P-well regions (HVPW) and the plurality of stripe-shaped high voltage N-well regions (HVNW), and the deep N-well region (DNW) is located below the plurality of stripe-shaped high voltage P-well regions (HVPW), the plurality of stripe-shaped high voltage N-. The Breakdown Voltage (BV) variation measured after the above-described device was tested is shown by curve a (conventional high voltage diode) and curve B (inventive high voltage diode).
As can be seen from fig. 5, the Breakdown Voltage (BV) (curve a) of the conventional high voltage diode does not reach 40 volts (V), which is far from the value of the Breakdown Voltage (BV) required for the operation of the conventional high voltage device. The high voltage diode of the present invention has a high voltage P-well (HVPW) and a high voltage N-well (HVNW) designed as a plurality of strip-shaped doped regions, which are arranged at intervals, thereby greatly increasing the junction area of PN, so that the high voltage diode can effectively disperse the generated electric field during operation, and further increase the value of the Breakdown Voltage (BV) (curve B) thereof to more than 60 volts (V).
The invention replaces the traditional high voltage P well region (HVPW) with whole extension doping by adjusting the doping interval to form a plurality of strip-shaped (strip) doping regions, and forms a special high voltage diode (HV diode) structure with a plurality of high voltage N well regions (HVNW) arranged at intervals. The arrangement of the plurality of strip-shaped doped regions greatly increases the junction area of PN, so that the generated electric field can be effectively dispersed when the high-voltage diode operates, and the Breakdown Voltage (BV) of the high-voltage diode can be greatly improved by over 80 percent even in the presence of a deep N well region (DNW). In addition, the invention can directly introduce the high-voltage diode structure without changing MOS manufacturing process, injection condition and mask combination, and does not influence the Breakdown Voltage (BV) of other high-voltage elements arranged in the same circuit system with the high-voltage diode structure, thereby ensuring the electrical stability of the high-voltage elements and further maintaining the stability and efficiency of the whole circuit.
The features of the above-described embodiments are helpful to those skilled in the art in understanding the present invention. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced above. It should also be understood by those skilled in the art that such equivalent substitutions may be made without departing from the spirit and scope of the present invention, and that changes, substitutions, or alterations may be made without departing from the spirit and scope of the present invention.

Claims (23)

1.一种半导体结构，其特征在于，包括：1. a semiconductor structure, is characterized in that, comprises: 一基板；a substrate; 多个条状第一掺杂区，形成于所述基板中；a plurality of strip-shaped first doped regions formed in the substrate; 多个条状第二掺杂区，形成于所述基板中，分别位于所述多个条状第一掺杂区之间，其中所述多个条状第一掺杂区的掺杂型式与所述多个条状第二掺杂区的掺杂型式相反；A plurality of strip-shaped second doping regions are formed in the substrate and are respectively located between the plurality of strip-shaped first doping regions, wherein the doping patterns of the plurality of strip-shaped first doping regions are the same as The doping patterns of the plurality of strip-shaped second doping regions are opposite; 一第三掺杂区，形成于所述基板中，包围所述多个条状第一掺杂区与所述多个条状第二掺杂区，其中所述第三掺杂区的掺杂型式与所述多个条状第二掺杂区的掺杂型式相同；以及A third doping region is formed in the substrate and surrounds the plurality of strip-shaped first doping regions and the plurality of strip-shaped second doping regions, wherein the doping of the third doping region The type is the same as the doping type of the plurality of strip-shaped second doped regions; and 一第四掺杂区，形成于所述基板中，位于所述多个条状第一掺杂区、所述多个条状第二掺杂区与所述第三掺杂区下方，其中所述第四掺杂区的掺杂型式与所述多个条状第二掺杂区的掺杂型式相同。a fourth doped region formed in the substrate and located under the plurality of strip-shaped first doped regions, the plurality of strip-shaped second doped regions and the third doped regions, wherein the The doping pattern of the fourth doping region is the same as the doping pattern of the plurality of strip-shaped second doping regions. 2.如权利要求1所述的半导体结构，其特征在于，所述基板为P型或N型基板。2. The semiconductor structure of claim 1, wherein the substrate is a P-type or N-type substrate. 3.如权利要求2所述的半导体结构，其特征在于，当所述基板为P型基板时，所述多个条状第一掺杂区的掺杂型式为P型、所述多个条状第二掺杂区的掺杂型式为N型，所述第三掺杂区的掺杂型式为N型，以及所述第四掺杂区的掺杂型式为N型。3 . The semiconductor structure of claim 2 , wherein when the substrate is a P-type substrate, the doping pattern of the plurality of strip-shaped first doped regions is P-type, and the plurality of stripes The doping type of the second doped region is N-type, the doping type of the third doped region is N-type, and the doping type of the fourth doped region is N-type. 4.如权利要求2所述的半导体结构，其特征在于，当所述基板为N型基板时，所述多个条状第一掺杂区的掺杂型式为N型、所述多个条状第二掺杂区的掺杂型式为P型，所述第三掺杂区的掺杂型式为P型，以及所述第四掺杂区的掺杂型式为P型。4 . The semiconductor structure of claim 2 , wherein when the substrate is an N-type substrate, the doping pattern of the plurality of strip-shaped first doped regions is N-type, and the plurality of stripes The doping type of the second doped region is P-type, the doping type of the third doped region is P-type, and the doping type of the fourth doped region is P-type. 5.如权利要求1所述的半导体结构，其特征在于，所述多个条状第一掺杂区与所述多个条状第二掺杂区的宽度相同。5 . The semiconductor structure of claim 1 , wherein the plurality of strip-shaped first doped regions and the plurality of strip-shaped second doped regions have the same width. 6 . 6.如权利要求1所述的半导体结构，其特征在于，所述多个条状第一掺杂区与所述多个条状第二掺杂区于所述基板中的深度相同。6 . The semiconductor structure of claim 1 , wherein the plurality of strip-shaped first doped regions and the plurality of strip-shaped second doped regions have the same depth in the substrate. 7 . 7.如权利要求6所述的半导体结构，其特征在于，所述第三掺杂区于所述基板中的深度大于所述多个条状第一掺杂区与所述多个条状第二掺杂区于所述基板中的深度。7 . The semiconductor structure of claim 6 , wherein a depth of the third doped region in the substrate is greater than that of the plurality of strip-shaped first doped regions and the plurality of strip-shaped first doped regions. 8 . The depth of the two doped regions in the substrate. 8.如权利要求1所述的半导体结构，其特征在于，所述多个条状第一掺杂区、所述多个条状第二掺杂区与所述第三掺杂区的掺杂浓度相同。8 . The semiconductor structure of claim 1 , wherein the doping of the plurality of strip-shaped first doped regions, the plurality of strip-shaped second doped regions and the third doped region the same concentration. 9.如权利要求8所述的半导体结构，其特征在于，所述第四掺杂区的掺杂浓度低于所述多个条状第一掺杂区、所述多个条状第二掺杂区与所述第三掺杂区的掺杂浓度。9 . The semiconductor structure of claim 8 , wherein the doping concentration of the fourth doping region is lower than that of the plurality of strip-shaped first doping regions and the plurality of strip-shaped second doping regions. 10 . Doping concentrations of the impurity region and the third doping region. 10.如权利要求1所述的半导体结构，其特征在于，所述第四掺杂区为一连续掺杂区域。10. The semiconductor structure of claim 1, wherein the fourth doped region is a continuous doped region. 11.如权利要求3所述的半导体结构，其特征在于，所述多个条状第一掺杂区为高压P井区，以及所述多个条状第二掺杂区与所述第三掺杂区为高压N井区。11. The semiconductor structure of claim 3, wherein the plurality of strip-shaped first doped regions are high-voltage P-well regions, and the plurality of strip-shaped second doped regions and the third The doped region is a high-voltage N-well region. 12.如权利要求11所述的半导体结构，其特征在于，所述多个条状第一掺杂区、所述多个条状第二掺杂区与所述第三掺杂区构成多个高压二极管。12 . The semiconductor structure of claim 11 , wherein the plurality of strip-shaped first doped regions, the plurality of strip-shaped second doped regions and the third doped regions constitute a plurality of 12 . high voltage diodes. 13.一种半导体结构，其特征在于，包括：13. A semiconductor structure, characterized in that it comprises: 一基板；a substrate; 一第一掺杂区，形成于所述基板中；a first doped region formed in the substrate; 一第二掺杂区，形成于所述基板中，包围所述第一掺杂区，其中所述第一掺杂区的掺杂型式与所述第二掺杂区的掺杂型式相反；以及a second doped region formed in the substrate surrounding the first doped region, wherein the doping pattern of the first doped region is opposite to that of the second doped region; and 多个条状第三掺杂区，形成于所述基板中，位于所述第一掺杂区与所述第二掺杂区下方，其中所述多个条状第三掺杂区的掺杂型式与所述第二掺杂区的掺杂型式相同。A plurality of strip-shaped third doped regions are formed in the substrate and located below the first doped region and the second doped region, wherein the plurality of strip-shaped third doped regions are doped The type is the same as that of the second doped region. 14.如权利要求13所述的半导体结构，其特征在于，所述基板为P型或N型基板。14. The semiconductor structure of claim 13, wherein the substrate is a P-type or N-type substrate. 15.如权利要求14所述的半导体结构，其特征在于，当所述基板为P型基板时，所述第一掺杂区的掺杂型式为P型，所述第二掺杂区的掺杂型式为N型，以及所述多个条状第三掺杂区的掺杂型式为N型。15. The semiconductor structure of claim 14, wherein when the substrate is a P-type substrate, the doping type of the first doping region is P-type, and the doping pattern of the second doping region is P-type The impurity type is N-type, and the doping type of the plurality of strip-shaped third doped regions is N-type. 16.如权利要求14所述的半导体结构，其特征在于，当所述基板为N型基板时，所述第一掺杂区的掺杂型式为N型，所述第二掺杂区的掺杂型式为P型，以及所述多个条状第三掺杂区的掺杂型式为P型。16. The semiconductor structure of claim 14, wherein when the substrate is an N-type substrate, the doping type of the first doping region is N-type, and the doping pattern of the second doping region is N-type The impurity type is P-type, and the doping type of the plurality of strip-shaped third doped regions is P-type. 17.如权利要求13所述的半导体结构，其特征在于，所述第一掺杂区与所述第二掺杂区于所述基板中的深度相同。17. The semiconductor structure of claim 13, wherein the depth of the first doped region and the second doped region in the substrate is the same. 18.如权利要求13所述的半导体结构，其特征在于，所述第一掺杂区与所述第二掺杂区的掺杂浓度相同。18. The semiconductor structure of claim 13, wherein the first doped region and the second doped region have the same doping concentration. 19.如权利要求18所述的半导体结构，其特征在于，所述多个条状第三掺杂区的掺杂浓度低于所述第一掺杂区与所述第二掺杂区的掺杂浓度。19. The semiconductor structure of claim 18, wherein the doping concentration of the plurality of strip-shaped third doping regions is lower than the doping concentration of the first doping region and the second doping region impurity concentration. 20.如权利要求13所述的半导体结构，其特征在于，所述多个条状第三掺杂区的宽度相同。20 . The semiconductor structure of claim 13 , wherein the plurality of strip-shaped third doped regions have the same width. 21 . 21.如权利要求13所述的半导体结构，其特征在于，所述多个条状第三掺杂区彼此分离。21. The semiconductor structure of claim 13, wherein the plurality of strip-shaped third doped regions are separated from each other. 22.如权利要求15所述的半导体结构，其特征在于，所述第一掺杂区为高压P井区，以及所述第二掺杂区为高压N井区。22. The semiconductor structure of claim 15, wherein the first doped region is a high-voltage P-well region, and the second doped region is a high-voltage N-well region. 23.如权利要求22所述的半导体结构，其特征在于，所述第一掺杂区与第二掺杂区构成多个高压二极管。23. The semiconductor structure of claim 22, wherein the first doped region and the second doped region constitute a plurality of high voltage diodes.
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