CN112290367A - A Novel Micro-Laser Device for Directly Generating Pulsed Q-Switched Frequency-doubling Complex Transverse Mode Output - Google Patents
A Novel Micro-Laser Device for Directly Generating Pulsed Q-Switched Frequency-doubling Complex Transverse Mode Output Download PDFInfo
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- CN112290367A CN112290367A CN202011182989.4A CN202011182989A CN112290367A CN 112290367 A CN112290367 A CN 112290367A CN 202011182989 A CN202011182989 A CN 202011182989A CN 112290367 A CN112290367 A CN 112290367A
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- 239000013078 crystal Substances 0.000 claims abstract description 53
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
本发明专利是一款新型的直接产生脉冲调Q的倍频复杂横模输出的微型激光器装置。该装置包括增益晶体、可饱和吸收体、倍频晶体和热沉四部分。其中增益晶体为Nd:YAG晶体，用以产生基频光，可饱和吸收体为Cr:YAG晶体，用以实现被动调Q产生脉冲输出，倍频晶体为LiTaO3晶体，用以对基频光倍频并倍增横模阶数。增益晶体和倍频晶体的一侧镀膜构成了谐振腔，外侧均贴有铜热沉以增加微片导热效率保证装置正常工作。本装置能够有效得到高阶横模激光输出，并且装置简单，结构紧凑稳定。
The patent of the present invention is a new type of micro-laser device that directly generates pulsed Q-switched frequency-doubling complex transverse mode output. The device includes four parts: gain crystal, saturable absorber, frequency doubling crystal and heat sink. Among them, the gain crystal is Nd:YAG crystal, which is used to generate fundamental frequency light, the saturable absorber is Cr:YAG crystal, which is used to realize passive Q-switching to generate pulse output, and the frequency doubling crystal is LiTaO 3 crystal, which is used for fundamental frequency light. Multiplies the frequency and multiplies the transverse mode order. One side of the gain crystal and the frequency doubling crystal is coated to form a resonant cavity, and a copper heat sink is attached to the outside to increase the thermal conductivity of the microchip and ensure the normal operation of the device. The device can effectively obtain high-order transverse mode laser output, and has the advantages of simple device, compact and stable structure.
Description
The technical field is as follows:
the present invention relates to a microchip pulse laser technology and a frequency doubling laser technology, particularly to a microchip pulse laser technology capable of directly generating a complex transverse mode.
Background art:
the laser beam output by the complex transverse mode has wide application in the fields of particle manipulation, optical communication, 3D printing and the like. In particle manipulation, the laser spot shape is the main factor affecting the directional manipulation of particles; in the field of optical communication, the orbital angular momentum carried by photons in the vortex beam is proportional to the beam order l. The common method for obtaining high-order transverse mode laser output is mainly to add phase elements or absorption rings and other elements in a resonant cavity to obtain high-order transverse mode output, and the method is completely different from the method, simpler, more compact and more stable in structure.
The invention content is as follows:
the invention utilizes the gain medium with a microchip structure to generate initial frequency laser. Due to the saturable absorber, the laser only can penetrate through the saturable absorber when the initial frequency laser power is high enough, and the first-class phase matching frequency multiplication is realized through the frequency multiplication crystal to obtain the pulse laser output. In the process of laser frequency doubling, the frequency of the laser is changed to be twice of the original frequency, and the transverse mode order of the laser is also changed to be twice of the original order, so that high-order complex transverse mode output is realized.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the laser resonator is composed of three crystals: two of which are a gain medium and a saturable absorber for generating pulsed laser light. The other is a frequency doubling crystal, which doubles the frequency of the output of the microchip laser and doubles the order of the transverse mode. In order to reduce the volume of the laser and facilitate the integration of the laser, the three crystals all adopt a microchip structure. The thickness is not more than 1mm, and the cross section area is 5 mm.
When the laser power is low for the initial 1064nm wavelength inside the cavity, the laser cannot pass through the saturable absorber. When the laser peak power is high enough, the laser with the initial 1064nm wavelength passes through the saturable absorber and passes through the frequency doubling crystal to obtain frequency doubling pulse laser output with the wavelength of 532nm, and the transverse mode order of the output laser is doubled at the same time. Thereby realizing the output of frequency doubling pulse high-order transverse mode laser. The gain crystal and the frequency doubling crystal are externally attached with copper heat sinks to accelerate the heat conduction of the microchip, ensure the temperature of the crystal to be constant and realize stable frequency conversion.
The invention has the beneficial effects that:
the technology can directly generate the pulse high-order transverse mode light beam without a special pumping source and a light beam control element. In addition, the cross section area and the thickness of the gain crystal, the saturable absorber and the frequency doubling crystal with the microchip structure can be controlled in millimeter magnitude, the volume of the laser is greatly reduced, and integration is facilitated.
Description of the drawings:
fig. 1 is a three-view diagram of the structure of a gain medium and a frequency doubling crystal, and the main structure is as follows: gain medium, saturable absorber, frequency doubling crystal, and resonator cavity mirror.
FIG. 1 is illustrated symbolically as follows: 1, a gain medium; 2, a saturable absorber; 3, frequency doubling crystals; 4, a resonant cavity mirror 1; 5, a resonant cavity mirror 2; 6, heat sink 1; 7, heat sink 2.
The specific implementation mode is as follows:
the resonant cavity of the microchip laser consists of a gain crystal Nd, a YAG crystal, a saturable absorber Cr, a YAG crystal and a frequency doubling crystal LiTaO3The crystal is compounded. The three adopt a microchip structure, the thickness is not more than 1mm, and the cross section area is 5 mm. Are adhered together in the form of optical cement. The end face of the gain crystal is coated with a film to form the resonant cavity mirror 1 which has high transmittance to pumping light of 808nm and high reflectance to fundamental frequency light of 1064nm and frequency doubling light of 532 nm. And the end face of the frequency doubling crystal is coated with a film to form a resonant cavity mirror 2 which is highly reflective to the 1064nm fundamental frequency light and highly transparent to 532nm laser of the frequency doubling light. The gain medium, the saturable absorber, the frequency doubling crystal, the resonant cavity mirror 1 and the resonant cavity mirror 2 form a resonant cavity. The saturable absorber can be similar to a two-level system, the absorption coefficient of the saturable absorber is reduced along with the increase of light intensity, when the light intensity is large, the absorption coefficient is zero, and almost all incident light penetrates through the saturable absorber. When the pumping light just enters from the end face of the resonant cavity mirror 1, the laser cannot start oscillation due to the large absorption coefficient of the saturable absorber and the large loss of the resonant cavity. The amplified spontaneous radiation gradually increases along with the accumulation of the number of inversion concentration in the laser working substance, when the light intensity increases, the absorption coefficient of the saturable absorber is obviously reduced, the laser gain is greater than the loss, and the laser starts to oscillate. As the intensity of light increases, the absorption coefficient continues to decrease, causing the laser light to increase more rapidly. When the light intensity is highUpon reaching saturation, the gain factor decreases, eventually leading to laser extinction. This cycle is repeated, producing a sequence of pulses. After pulse laser is propagated into frequency doubling crystal and the first kind of phase matching condition (oo-e) is reached, frequency doubling effect is produced, the laser frequency is twice of original frequency, and the transverse mode order is twice of original order, LGp,lAnd (1064nm) light beam l is changed into 2l, the wavelength is changed into 532nm, wherein l is the transverse mode order of the initial light beam, and pulse frequency doubling high-order transverse mode laser output is realized. A layer of copper heat sink is attached to the outside of the gain crystal and the frequency doubling crystal, the aperture with the diameter of 3mm is arranged in the center of the heat sink and used for light transmission, the heat sink is used for accelerating the heat conduction of the microchip, the temperature of the crystal is ensured to be constant, the influence of the thermal effect of the crystal is reduced, and stable frequency conversion is realized.
Claims (4)
1. A miniature laser device for outputting pulse Q-switched frequency-doubled complex transverse mode output is characterized in that: gain crystal, absorption crystal, frequency doubling crystal and heat sink on two sides of the microchip, wherein:
the gain crystal is used for converting pump light with wavelength of 808nm into laser with wavelength of 1064 nm;
the absorption crystal is used for passively adjusting Q and generating pulse output;
the frequency doubling crystal is used for doubling the frequency of 1064nm laser and doubling the number of transverse modes of the laser to obtain high-order 532nm laser;
and the heat sink is used for reducing the heat conduction of the microchip crystal and ensuring the constant temperature of the crystal.
2. The miniature laser device for outputting pulsed Q-switched frequency-doubled complex transverse mode output according to claim 1, further characterized in that: the gain crystal is plated with a high reflection film for 1064nm and 532nm and an antireflection film for 808nm, and the frequency doubling crystal is plated with a high reflection film for 1064nm and a high transmission film for 532 nm.
3. The miniature laser device for outputting pulsed Q-switched frequency-doubled complex transverse mode output according to claim 1, further characterized in that: the gain crystal adopts Nd-YAG crystal, the absorption crystal adopts Cr-YAG crystal, and the frequency doubling crystal adopts LiTaO3And (4) crystals.
4. The miniature laser device for outputting pulsed Q-switched frequency-doubled complex transverse mode output according to claim 1, further characterized in that: in Nd, YAG crystal and LiTaO3Copper heat sinks are attached to two sides of the crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011182989.4A CN112290367A (en) | 2020-10-29 | 2020-10-29 | A Novel Micro-Laser Device for Directly Generating Pulsed Q-Switched Frequency-doubling Complex Transverse Mode Output |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011182989.4A CN112290367A (en) | 2020-10-29 | 2020-10-29 | A Novel Micro-Laser Device for Directly Generating Pulsed Q-Switched Frequency-doubling Complex Transverse Mode Output |
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| CN112290367A true CN112290367A (en) | 2021-01-29 |
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| CN202011182989.4A Pending CN112290367A (en) | 2020-10-29 | 2020-10-29 | A Novel Micro-Laser Device for Directly Generating Pulsed Q-Switched Frequency-doubling Complex Transverse Mode Output |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5394413A (en) * | 1994-02-08 | 1995-02-28 | Massachusetts Institute Of Technology | Passively Q-switched picosecond microlaser |
| CN200947526Y (en) * | 2006-09-11 | 2007-09-12 | 福州高意通讯有限公司 | Semiconductor end pumped micro laser |
| CN105048274A (en) * | 2015-08-24 | 2015-11-11 | 山东大学 | Passive Q-switched pulse-type self-frequency doubling green light laser |
| CN109698461A (en) * | 2019-03-11 | 2019-04-30 | 山东大学 | A kind of passive Q-adjusted pulsed is from frequency doubling green light laser |
| CN210201151U (en) * | 2019-08-06 | 2020-03-27 | 河北工业大学 | All-solid-state green laser |
-
2020
- 2020-10-29 CN CN202011182989.4A patent/CN112290367A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5394413A (en) * | 1994-02-08 | 1995-02-28 | Massachusetts Institute Of Technology | Passively Q-switched picosecond microlaser |
| CN200947526Y (en) * | 2006-09-11 | 2007-09-12 | 福州高意通讯有限公司 | Semiconductor end pumped micro laser |
| CN105048274A (en) * | 2015-08-24 | 2015-11-11 | 山东大学 | Passive Q-switched pulse-type self-frequency doubling green light laser |
| CN109698461A (en) * | 2019-03-11 | 2019-04-30 | 山东大学 | A kind of passive Q-adjusted pulsed is from frequency doubling green light laser |
| CN210201151U (en) * | 2019-08-06 | 2020-03-27 | 河北工业大学 | All-solid-state green laser |
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Application publication date: 20210129 |